The five parameter grain boundary character distribution of polycrystalline silicon

Ratanaphan, Sutatch; Yoon, Yohan; Rohrer, Gregory S.

doi:10.1007/s10853-014-8195-2

Cited by 82 publications

(43 citation statements)

References 55 publications

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“…Together, the 60°h1 11i combination represents a R3 CSL, or a coherent twist grain boundary [45]. This angle-axis pair agrees with the IND results, since a 70.53°symmet-ric tilt about h1 1 0i is geometrically equivalent to the 60°twist around h1 1 1i: both configurations produce a R3 CSL [45,58].…”

Section: Texture Analysissupporting

confidence: 67%

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The dynamics of coarsening in highly anisotropic systems: Si particles in Al–Si liquids

et al. 2015

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a b s t r a c tThe coarsening process of an Al-29.9wt%Si alloy is studied using four-dimensional phase contrast X-ray tomography. This alloy is composed of highly anisotropic, primary Si particles in an eutectic matrix. We analyze the morphology of the primary Si particles during coarsening by determining the interface normal distribution and the interface shape distribution. The inverse surface area per unit volume increases with the cube root of time despite the lack of microstructural self-similarity and highly anisotropic particle morphology. More specifically, over the time frame of the experiments, the Si particles evolve from mostly faceted domains to a more isotropic structure that is not given by the Wulff shape of the crystal. These trends can be rationalized by the presence of twin defects that intersect particle edges and that may provide the kink sites necessary for interfacial propagation, thus leading to a more isotropic structure. While in many cases the interfacial velocity of Si solid-liquid interfaces is highly anisotropic, the presence of many defects leads to a highly mobile interface and diffusion-limited coarsening.

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Section: Texture Analysissupporting

confidence: 67%

“…[58], our results demonstrate the high incidence of coherent twin boundaries in the polycrystalline Si particles.…”

Section: Texture Analysissupporting

confidence: 57%

The dynamics of coarsening in highly anisotropic systems: Si particles in Al–Si liquids

et al. 2015

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“…Nevertheless, the coherent twins dominate in the CSL GBs population also in bcc metals ( [44] and references therein). Twins play a special role also in metals with hexagonal lattice [64] and semiconductors [65]. Therefore, we illustrate numerous faceting-roughening phenomena using twin GBs.…”

Section: Faceting-roughening Of Twin (R 5 3) Grain Boundaries In Coppermentioning

confidence: 97%

Review: grain boundary faceting–roughening phenomena

et al. 2015

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Similar to free surfaces, the grain boundaries (GBs) in metals, semiconductors and insulators can contain flat (faceted) and curved (rough) portions. In the majority of cases, facets are parallel to the most densely packed planes of coincidence sites lattice formed by two lattices of abutting grains. Facets disappear with the increasing temperature (faceting-roughening transition) and the increasing angular distance from coincidence misorientation. The temperature of GB faceting-roughening transition T R decreases with the increasing inverse density of coincidence sites R. In case of fixed R, T R decreases with the decreasing density of coincidence sites in the GB plane.The intersection line (ridge) between facets or between facets and curved (rough) portions of surfaces can be of first order (two different tangents in the contact point) or of second order (common tangent, continuous transitions). The rough (curved) portions of GB can also form the firstorder rough-to-rough ridges (with two tangents). GB facets control the transition from normal to abnormal grain growth and strongly influence the GB migration, diffusion, wetting, fracture and electrical conductivity.

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“…Grain boundary distribution was controlled by template, since random type grain boundary fraction was as high as 65% at the initial stage of growth which decreased to a constant of around 50%, while Σ3 grain boundary fraction was about 25% which later increased to over 40 %. This distribution of grain boundary fraction is unlike that of conventional mc-Si where the Σ3 grain boundaries are dominant [11,12], but it is similar to HP-mc [5,6]. The grain size increased steadily with growth, having a step-like increase at the initial growth region.…”

Section: Resultsmentioning

confidence: 72%

Control of extended defects in cast multicrystalline silicon using polycrystalline template

Prakash

Jiptner

Chen

et al. 2015

Phys. Status Solidi C

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Extended defects were controlled using polycrystalline silicon as a template for cast‐growth of multicrystalline silicon. At the initial stage of growth, small randomly oriented grains with a high density of random type grain boundaries were obtained. With growth, the grain size increased and the fraction of random grain boundaries decreased. Electrical activity of defects was investigated and it was found that with growth, network of small angle grain boundaries became the most electrically active defects. This network of small angle grain boundaries were found to have a tilt angle less than 3° and were mainly found in elongating grains. The density of these highly electrically active grain boundaries increased with growth. This can be attributed to propagation and agglomeration of dislocations into small angle grain boundaries. The high density of random grain boundaries in this ingot may suppress dislocation propagation between grains, however they do not intersect elongating grains enabling dislocation propagation in elongated grains. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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The five parameter grain boundary character distribution of polycrystalline silicon

Cited by 82 publications

References 55 publications

The dynamics of coarsening in highly anisotropic systems: Si particles in Al–Si liquids

The dynamics of coarsening in highly anisotropic systems: Si particles in Al–Si liquids

Review: grain boundary faceting–roughening phenomena

Control of extended defects in cast multicrystalline silicon using polycrystalline template

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