The first and the second-order magnetic anisotropy in a Fe/MgO system under electric field: a first-principles study

Kitaoka, Yukie; Imamura, Hiroshi

doi:10.35848/1347-4065/abd3be

Cited by 4 publications

(2 citation statements)

References 34 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…[153][154][155][156] The stabilization of the conically magnetized state arises from the interplay between the first-and second-order magnetic anisotropy. [157][158][159][160] The cone state is experimentally observed in thin films of Co deposited on Pt or Pd, 161 Co/Pt multilayers, 162 MgO/CoFeB/Ta heterostructure, 163 and FM/AFM interfaces. [164][165][166] The initial magnetization state at minimum energy for zero applied voltage can be given by 153,156…”

Section: Cfl Methodsmentioning

confidence: 97%

Voltage-controlled magnetic anisotropy-based spintronic devices for magnetic memory applications: Challenges and perspectives

Mishra,

Sravani,

Bose

et al. 2024

Journal of Applied Physics

View full text Add to dashboard Cite

Electronic spins provide an additional degree of freedom that can be used in modern spin-based electronic devices. Some benefits of spintronic devices include nonvolatility, energy efficiency, high endurance, and CMOS compatibility, which can be leveraged for data processing and storage applications in today's digital era. To implement such functionalities, controlling and manipulating electron spins is of prime interest. One of the efficient ways of achieving this in spintronics is to use the electric field to control electron spin or magnetism through the voltage-controlled magnetic anisotropy (VCMA) effect. VCMA avoids the movement of charges and significantly reduces the Ohmic loss. This article reviews VCMA-based spintronic devices for magnetic memory applications. First, we briefly discuss the VCMA effect and various mechanisms explaining its physical origin. We then mention various challenges in VCMA that impede it for practical VCMA-based magnetic memory. We review various techniques to address them, such as field-free switching operation, write error rate improvement, widening the operation window, enhancing the VCMA coefficient, and ensuring fast-read operation with low read disturbance. Finally, we draw conclusions outlining the future perspectives.

show abstract

Section: Cfl Methodsmentioning

confidence: 97%

Voltage-controlled magnetic anisotropy-based spintronic devices for magnetic memory applications: Challenges and perspectives

Mishra,

Sravani,

Bose

et al. 2024

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…The conically magnetized state originates from the competition between the first (K 1 ) and second (K 2 ) order magnetic anisotropy. [134][135][136][137][138][139][140][141] It has been experimentally studied in various systems including thin Co on Pt or Pd, [134] Co/Pt multilayers, [135] and Ta/CoFeB/MgO structures. [136] Electric field control of the cone state has also been experimentally demonstrated, [137] where an electric field can be used to adjust the cone angle of the free layer.…”

Section: Field-free Vcma Switchingmentioning

confidence: 99%

Progress and Application Perspectives of Voltage‐Controlled Magnetic Tunnel Junctions

Shao,

Khalili Amiri

2023

Adv Materials Technologies

View full text Add to dashboard Cite

This article discusses the current state of development, open research opportunities, and application perspectives of electric‐field‐controlled magnetic tunnel junctions that use the voltage‐controlled magnetic anisotropy effect to control their magnetization. The integration of embedded magnetic random‐access memory (MRAM) into mainstream semiconductor foundry manufacturing opens new possibilities for the development of energy‐efficient, high‐performance, and intelligent computing systems. The current generation of MRAM, which uses the current‐controlled spin‐transfer torque (STT) effect to write information, has gained traction due to its nonvolatile data retention and lower integration cost compared to embedded Flash. However, scaling MRAM to high bit densities will likely require a transition from current‐controlled to voltage‐controlled operation. In this perspective, an overview of voltage‐controlled magnetic anisotropy (VCMA) as a promising beyond‐STT write mechanism for MRAM devices is provided and recent advancements in developing VCMA‐MRAM devices with perpendicular magnetization are highlighted. Starting from the fundamental mechanisms, the key remaining challenges of VCMA‐MRAM, such as increasing the VCMA coefficient, controlling the write error rate, and achieving field‐free VCMA switching are discussed. Then potential solutions are discussed and open research questions are highlighted. Lastly, prospective applications of voltage‐controlled magnetic tunnel junctions (VC‐MTJs) in security applications, extending beyond their traditional role as memory devices are explored.

show abstract

Developments in voltage-controlled subnanosecond magnetization switching

Yamamoto

Matsumoto

Nozaki

et al. 2022

Journal of Magnetism and Magnetic Materials

View full text Add to dashboard Cite

The first and the second-order magnetic anisotropy in a Fe/MgO system under electric field: a first-principles study

Cited by 4 publications

References 34 publications

Voltage-controlled magnetic anisotropy-based spintronic devices for magnetic memory applications: Challenges and perspectives

Voltage-controlled magnetic anisotropy-based spintronic devices for magnetic memory applications: Challenges and perspectives

Progress and Application Perspectives of Voltage‐Controlled Magnetic Tunnel Junctions

Developments in voltage-controlled subnanosecond magnetization switching

Contact Info

Product

Resources

About