The finite element method was used to analyze the sensitivity of piezoresistive pressure sensors in micro-electro-mechanical system

Abstract

With the development of technology, the pressure sensor in MEMS system is required to be small in size and high in accuracy, but the experiment is difficult and the error is large. In this paper, the finite element method is used to analyze a silicon-based pressure sensor model composed of a square film with an edge length of 1 mm, a thickness of 20 m, a p-type doping density of 1.321019 cm-3 and a thickness of 400 nm, and the output voltage sensitivity of the silicon-based pressure sensor model is 0.6mV/kPa at 0-100 Kpa, which meets the requirements of high sensitivity and linearity of MEMS pressure sensor.