The Field Effect and Mott Transistor Based on Vanadium Dioxide

Belyaev, Maksim; Velichko, Andrei; Борисков, П. П.; Kuldin, Nik; Putrolaynen, Vadim; Stefanovitch, G. B.

doi:10.15393/j8.art.2014.3045

Cited by 13 publications

(14 citation statements)

References 18 publications

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“…Thus, it is difficult to distinguish whether thermal or electric field inducing VO 2 phase transition on their two-terminal VO 2 devices. 8,32,33 In our experiments, electric current ( Fig. 4(b)) during the phase transition process is very small, so the effect of Joule heat can be ignored basically.…”

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confidence: 93%

“…The threshold field for the initiation of VO 2 phase transition is $4.31 Â 10 5 V m À1 at 25 C, which is in accordance with the theoretical calculations of the electric field inducing VO 2 phase transition. 32 It has been shown that the phase transition can be induced by application of a sufficiently large voltage across the two-terminal VO 2 device. 8 But the dc voltage is applied directly to the two-terminal device, which inevitably provides a current flow that can heat the material over the critical phase transition temperature.…”

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confidence: 99%

“…This shows that the electric field can be valid to induce VO 2 phase transition at room temperature, though more work will still be required to clarify this microscope process. 5,7,32 In fact, a recent research has illustrated that the phase transition of a similar strongly correlated material SmNiO 3 can be directly induced by electric field via electron doping instead of thermal excitation. 34 Besides, it has been revealed that the electron injection into VO 2 can lead a non-thermal pathway to induce its phase transition from monoclinic to rutile phases.…”

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confidence: 99%

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Negative capacitance switching via VO2 band gap engineering driven by electric field

et al. 2015

Applied Physics Letters

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We report the negative capacitance behavior of an energy band gap modulation quantum well with a sandwich VO2 layer structure. The phase transition is probed by measuring its capacitance. With the help of theoretical calculations, it shows that the negative capacitance changes of the quantum well device come from VO2 band gap by continuously tuning the temperature or voltage. Experiments reveal that as the current remains small enough, joule heating can be ignored, and the insulator-metal transition of VO2 can be induced by the electric field. Our results open up possibilities for functional devices with phase transitions induced by external electric fields other than the heating or electricity-heat transition.

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Negative capacitance switching via VO2 band gap engineering driven by electric field

et al. 2015

Applied Physics Letters

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“…in the transition process. These unique properties make VO 2 a suitable candidate for various technological potential applications in many fields, such as tunable filters [9], switching devices [10], memory materials [11], laser protection [12], ultrafast sensors [13], and Mott transistors [14]. Great attention has been attracted recently for the material both in scientific and technological applications.…”

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confidence: 99%

A Novel Method for Notable Reducing Phase Transition Temperature of VO2 Films for Smart Energy Efficient Windows

et al. 2019

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Although Vanadium dioxide (VO2) has a potential application value for smart energy efficient windows because of its unique phase transition characteristic, there are still many obstacles that need to be overcome. One challenge is to reduce its high transition temperature (ζc = 68 °C) to near room temperature without causing its phase transition performance degradation. In this paper, a novel method was employed that covered a 3 nm ultra-thin heavy Cr-doped VO2 layer on the pure VO2 films. Compared with the as-grown pure VO2, obviously, phase transition temperature decreasing from 59.5 °C to 48.0 °C was observed. Different from previous doping techniques, almost no phase transition performance weakening occurred. Based on the microstructure and electrical parameters measurement results, the mechanism of ζc reducing was discussed. The upper ultra-thin heavy Cr-doped layer may act as the induced role of phase transition. With temperature increasing, carrier concentration increased from the upper heavy Cr-doped layer to the bottom pure VO2 layer by diffusion, and induced the carrier concentration reach to phase transition critical value from top to bottom gradually. The present method is not only a simpler technique, but also avoids expensive alloy targets.

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“…This MIT leads to a drastic change in electrical conductivity of ideally up to five orders of magnitude, promising to enable a variety of new types of oxide electronic devices . However, due to the metallic nature of VO 2 (R) and its high concentration of charge carriers, it is very difficult, if not impossible, to induce the phase transition in the bulk via applying gate voltages with solid‐state dielectric materials . On the other hand, suppression of the MIT transition below T c , and reversible control of the electrical conductivity, was achieved by use of an ionic liquid (IL) gate instead of a solid‐state dielectric .…”

Section: Introductionmentioning

confidence: 99%

Electrochemically Triggered Metal–Insulator Transition between VO₂ and V₂O₅

Bishop

Lee

et al. 2018

Adv Funct Materials

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Distinct properties of multiple phases of vanadium oxide (VO x ) render this material family attractive for advanced electronic devices, catalysis, and energy storage. In this work, phase boundaries of VO x are crossed and distinct electronic properties are obtained by electrochemically tuning the oxygen content of VO x thin films under a wide range of temperatures. Reversible phase transitions between two adjacent VO x phases, VO 2 and V 2 O 5 , are obtained. Cathodic biases trigger the phase transition from V 2 O 5 to VO 2 , accompanied by disappearance of the wide band gap. The transformed phase is stable upon removal of the bias while reversible upon reversal of the electrochemical bias. The kinetics of the phase transition is monitored by tracking the time-dependent response of the X-ray absorption peaks upon the application of a sinusoidal electrical bias. The electrochemically controllable phase transition between VO 2 and V 2 O 5 demonstrates the ability to induce major changes in the electronic properties of VO x by spanning multiple structural phases. This concept is transferable to other multiphase oxides for electronic, magnetic, or electrochemical applications.induce the phase transition in the bulk via applying gate voltages with solid-state dielectric materials. [9][10][11] On the other hand, suppression of the MIT transition below T c , and reversible control of the electrical conductivity, was achieved by use of an ionic liquid (IL) gate instead of a solid-state dielectric. [12,13] The mechanism behind ionic liquid gating was beyond simple electrostatic polarization or field effect, but instead was electrochemical in nature. The removal of lattice oxygen, leading to reduction of the lattice and creation of oxygen vacancies, was proposed as the source for the suppression of the MIT transition. [14] In spite of the promise of VO 2 as a key component for "more-than-Moore" electronic devices, [15] it has several inevitable shortcomings originating from the character of its MIT. First, the band gap of the insulator phase VO 2 (M1) is only ≈0.6 eV, [2,16] which limits the maximum attainable magnitude of device conductance on/off ratios. The achievable on/off ratio of VO 2 -based devices in single crystal form is ≈10 5 , [17] while this value might be lowered to ≈10 3 or even lower for VO 2 thin films due to the existence of oxygen nonstoichiometry [1] or cation interdiffusion. [18] This value barely suffices for main stream logic devices requiring on/off ratios of 10 3 -10 6 [19] and is far lower than ≈10 7 that is required for low power logic devices (transistors). [20] Moreover, the relatively low T c of the MIT (≈68 °C) limits the maximum device operation temperature, below which VO 2 remains semiconducting. Thus, VO 2 -based electronic devices may require active cooling to maintain temperature below T c , thereby imposing additional constraints on deployment. Electronic StructuresThe ORCID identification number(s) for the author(s) of this article can be found under https://doi.

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The Field Effect and Mott Transistor Based on Vanadium Dioxide

Cited by 13 publications

References 18 publications

Negative capacitance switching via VO2 band gap engineering driven by electric field

Negative capacitance switching via VO2 band gap engineering driven by electric field

A Novel Method for Notable Reducing Phase Transition Temperature of VO2 Films for Smart Energy Efficient Windows

Electrochemically Triggered Metal–Insulator Transition between VO₂ and V₂O₅

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The Field Effect and Mott Transistor Based on Vanadium Dioxide

Cited by 13 publications

References 18 publications

Negative capacitance switching via VO2 band gap engineering driven by electric field

Negative capacitance switching via VO2 band gap engineering driven by electric field

A Novel Method for Notable Reducing Phase Transition Temperature of VO2 Films for Smart Energy Efficient Windows

Electrochemically Triggered Metal–Insulator Transition between VO2 and V2O5

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Electrochemically Triggered Metal–Insulator Transition between VO₂ and V₂O₅