The Fiber Texture Growth and the Surface Roughness of ZNO Thin Films

Selvan, J. A. Anna; Keppner, H.; Kroll, U.; Cuperus, J.; Shah, Attaullah; Adatte, Thierry; Randall, Nicholas X.

doi:10.1557/proc-472-39

Cited by 11 publications

(5 citation statements)

References 3 publications

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“…Considering the preferred [0002] direction of growth, that is perpendicular to the substrate plane, etching occurs anisotropically along these basal planes leaving hexagonal shaped pits. It is postulated that hydroxyl species may be responsible for the surface textured growth 5,48. Detection of these species is demonstrated using cavity ring down spectroscopy 49,50.…”

Section: Resultsmentioning

confidence: 99%

Plasma Processes and Film Growth of Expanding Thermal Plasma Deposited Textured Zinc Oxide

Groenen

Linden²,

Sanden

2005

Plasma Processes & Polymers

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Summary: Plasma processes and film growth of textured zinc oxide deposited from oxygen and diethyl zinc utilizing expanding thermal argon plasma created by a cascaded arc is discussed. In all conditions explored, an excess of argon ions and low temperature electrons is available, which represent the chemistry taking place. The plasma induced decomposition mechanism involves charge exchange with argon ions, and consecutive dissociative recombination with electrons emanating from the cascaded arc plasma source. The presence of reactive atomic species, specifically Zn* and O*, is confirmed with the help of optical emission spectroscopic measurements. The absence of residual carbon in the films suggests a mechanism involving the dissociation of the ZnC bonds in the plasma instead of at the surface. Film growth appears to proceed by the adsorption of particular zinc species, followed by subsequent reaction with oxygen, with the deposition rate being directly proportional to the arrival rate of the particular reactive species. It is suggested that atomic zinc adsorbs on the surface in a weakly bounded highly mobile state. Best intrinsic transparent conducting oxide quality, that is film conductivity, is obtained at the highest deposition rate.

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Section: Resultsmentioning

confidence: 99%

Plasma Processes and Film Growth of Expanding Thermal Plasma Deposited Textured Zinc Oxide

Groenen

Linden²,

Sanden

2005

Plasma Processes & Polymers

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“…Back contacts for the cells are made of highly textured ZnO and Ag. 12 The approach followed for the purifying technique applied here, is to try to control all possible oxygen contamination sources: This implied both achieving a sufficiently low reactor outgassing rate of less than 1.5ϫ10 Ϫ6 mbar l /s as well as using a SAES Getters Mono Torr™ roomtemperature metallic-alloy gas purifier ͑the latter reduces the oxygen contamination down to the sub-ppb range in the feedgas͒. The combination of these two measures leads to a successful reduction of the oxygen content in a-Si:H as well Published in Applied Physics Letters 69, issue 10,[1373][1374][1375]1996 which should be used for any reference to this work as in c-Si:H layers.…”

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confidence: 99%

Device grade microcrystalline silicon owing to reduced oxygen contamination

Torres

Meier

Flückiger

et al. 1996

Applied Physics Letters

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181

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As-deposited undoped microcrystalline silicon (μc-Si:H) has in general a pronounced n-type behavior. Such a material is therefore often not appropriate for use in devices, such as p-i-n diodes, as an active, absorbing i layer or as channel material for thin-film transistors. In recent work, on p-i-n solar cells, this disturbing n-type character had been successfully compensated by the ‘‘microdoping’’ technique. In the present letter, it is shown that this n-type behavior is mainly linked to oxygen impurities; therefore, one can replace the technologically delicate microdoping technique by a purification method, that is much easier to handle. This results in a reduction of oxygen impurities by two orders of magnitude; it has, furthermore a pronounced impact on the electrical properties of μc-Si:H films and on device performance, as well. Additionally, these results prove that the unwanted donor-like states within μc-Si:H are mainly due to extrinsic impurities and not to structural native defects.

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“…Deposition is performed on glass coated with textured SnO 2 (Asahi type U). Back contacts for these "standard" cells are made of highly textured ZnO and Ag [16].…”

Section: Methodsmentioning

confidence: 99%

Microcrystalline Silicon Solar Cells at Higher Deposition Rates by the VHF-GD

Torres¹,

Meier²,

Goetz³

et al. 1996

MRS Proc.

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A 7.7 % single junction cell efficiency for an entirely microcrystalline silicon (µc-Si:H) device has recently been reported by our group [1]. This was achieved by applying the purifier technique, a technique which is indeed easier to handle than the earlier used "microdoping" approach. The purpose of the present paper is twofold: First to show in detail the impact on device performance when a gas purifier is used; and second to illustrate that the deposition rate of the active, absorbing i-layer can be increased from the former 1.55 Å/s up to 4.3 Å/s while still maintaining reasonable device performances. In the latter case a first n-i-p solar cell structure on an aluminium sheet could be fabricated with an efficiency of 4.9 %.

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The Fiber Texture Growth and the Surface Roughness of ZNO Thin Films

Cited by 11 publications

References 3 publications

Plasma Processes and Film Growth of Expanding Thermal Plasma Deposited Textured Zinc Oxide

Plasma Processes and Film Growth of Expanding Thermal Plasma Deposited Textured Zinc Oxide

Device grade microcrystalline silicon owing to reduced oxygen contamination

Microcrystalline Silicon Solar Cells at Higher Deposition Rates by the VHF-GD

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