Abstract:Bi0.9Pb0.1FeO3 (BPFO) films were grown on SrRuO3 (SRO)/SrTiO3 (STO) substrates. The surface morphology of BPFO films is highly dependent on that of the SRO layer. Though the step height of STO (100) substrate is equal to one unit cell of STO crystal, the height and width of steps on the surface of SRO and BPFO are larger, which supports a step bunching growth mode on both the SRO layer and BPFO films. At zero bias voltage, the BPFO film exhibits a natural dipole polarization toward the SRO layer, which is beli… Show more
“…Therefore, based on overall effects, a relatively higher driving force, or electric field, is expected to initialize the O vacancies migration. Our previous study 25 indicating a subtle carrier accumulation at (BiPb)FeO 3 /SrRuO 3 interface reflects a different band bending effect which causes the polarization vector of (BiPb)FeO 3 pointing towards the interface at zero bias. How these different phenomena may affect the diode and photovoltaic effect are worthy to explore in near future.Figure 4Compositional analysis of (BiPb)FeO 3 /SrRuO 3 /SrTiO 3 heterostructures.…”
Scientific efforts are growing to understand artificial BiFeO3/SrRuO3/SrTiO3-heterostructures, wherein an altered environment at each interface, caused by epitaxial strains, broken symmetry, off-stoichiometry and charge transfer, can generate a rich spectrum of exotic properties. Herein, (BiPb)FeO3/SrRuO3/SrTiO3-heterostructures were sputtered with various top (BiPb)FeO3-layers at different growth temperatures (T
g). Strain relaxation at each interface changes with T
g and generates an additional peak alongside with (BiPb)FeO3 at a high T
g of 700 °C. Rutherford backscattering (RBS) was employed to understand this unusual behavior as to whether it is a mixture of two phases, layer splitting or inter-diffusion of elements. Surprisingly, complete overlapping of random and aligned RBS spectra from the sample with T
g = 700 °C indicates the presence of a large amount of defects/distortions at the interfaces. The RBS compositional analysis gives clear evidence of Fe and Ru vacancies to an extent that the structural integrity may not be maintained. This abnormal condition can be explained by the inter-diffusion of Pb and Bi elements into whole films and even into the top layer of the SrTiO3 substrate, which compensates for these vacancies by substitutional replacement and is responsible for the generation of the additional SrTi(BiPb)O3—peak. Below T
c
SrRuO
3, the magnetic properties change significantly with T
g.
“…Therefore, based on overall effects, a relatively higher driving force, or electric field, is expected to initialize the O vacancies migration. Our previous study 25 indicating a subtle carrier accumulation at (BiPb)FeO 3 /SrRuO 3 interface reflects a different band bending effect which causes the polarization vector of (BiPb)FeO 3 pointing towards the interface at zero bias. How these different phenomena may affect the diode and photovoltaic effect are worthy to explore in near future.Figure 4Compositional analysis of (BiPb)FeO 3 /SrRuO 3 /SrTiO 3 heterostructures.…”
Scientific efforts are growing to understand artificial BiFeO3/SrRuO3/SrTiO3-heterostructures, wherein an altered environment at each interface, caused by epitaxial strains, broken symmetry, off-stoichiometry and charge transfer, can generate a rich spectrum of exotic properties. Herein, (BiPb)FeO3/SrRuO3/SrTiO3-heterostructures were sputtered with various top (BiPb)FeO3-layers at different growth temperatures (T
g). Strain relaxation at each interface changes with T
g and generates an additional peak alongside with (BiPb)FeO3 at a high T
g of 700 °C. Rutherford backscattering (RBS) was employed to understand this unusual behavior as to whether it is a mixture of two phases, layer splitting or inter-diffusion of elements. Surprisingly, complete overlapping of random and aligned RBS spectra from the sample with T
g = 700 °C indicates the presence of a large amount of defects/distortions at the interfaces. The RBS compositional analysis gives clear evidence of Fe and Ru vacancies to an extent that the structural integrity may not be maintained. This abnormal condition can be explained by the inter-diffusion of Pb and Bi elements into whole films and even into the top layer of the SrTiO3 substrate, which compensates for these vacancies by substitutional replacement and is responsible for the generation of the additional SrTi(BiPb)O3—peak. Below T
c
SrRuO
3, the magnetic properties change significantly with T
g.
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