The fabrication of 3-D nanostructures by a low- voltage EBL

Oh, Seung Hun; Kim, Jae Gu; Kim, Chang Seok; Choi, Doo-Sun; Chang, Soon-Heung; Jeong, Myung Yung

doi:10.1016/j.apsusc.2010.11.155

Cited by 11 publications

(4 citation statements)

References 7 publications

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“…Essentially, lowering the soft bake temperature resulted in a reduction of 12.5% in the gap size. This reduction is attributed to the lower degree of polymer chain linking at lower temperatures [22], which leads to a larger volume of PMMA to develop in the exposed regions translating into a decrease in the CDs (i.e. gap size) of features like nanogaps, and conversely an increase in the LW of nanowires.…”

Section: Soft-bake Temperaturementioning

confidence: 99%

Optimization of e-beam lithography parameters for nanofabrication of sub-50 nm gold nanowires and nanogaps based on a bilayer lift-off process

Sahin,

Albayrak,

Yapici

2024

Nanotechnology

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Electron beam lithography (EBL) stands out as a powerful direct-write tool offering nanometer-scale patterning capability and is especially useful in low-volume R&D prototyping when coupled with pattern transfer approaches like etching or lift-off. Among pattern transfer approaches, lift-off is preferred particularly in research settings, as it is cost-effective and safe and does not require tailored wet/dry etch chemistries, fume hoods, and/or complex dry etch tools; all-in-all offering convenient, “undercut-free” pattern transfer rendering it useful, especially for metallic layers and unique alloys with unknown etchant compatibility or low etch selectivity. Despite the widespread use of the lift-off technique and optical/electron-beam lithography for micron to even sub-micron scales, existing reports in the literature on nanofabrication of metallic structures with critical dimension (CD) in the 10—20 nm regime with lift-off-based EBL patterning are either scattered, incomplete, or vary significantly in terms of experimental conditions, which calls for systematic process optimization. To address this issue, beyond what can be found in a typical photoresist datasheet, this paper reports a comprehensive study to calibrate EBL patterning of sub-50 nm metallic nanostructures including gold nanowires and nanogaps based on a lift-off process using bilayer PMMA as the resist stack. The governing parameters in EBL, including exposure dose, soft-bake temperature, development time, developer solution, substrate type, and proximity effect (PE) are experimentally studied through more than 200 EBL runs, and optimal process conditions are determined by field emission scanning electron microscope (FE-SEM) imaging of the fabricated nanostructures reaching as small as 11 nm feature size.

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Section: Soft-bake Temperaturementioning

confidence: 99%

Optimization of e-beam lithography parameters for nanofabrication of sub-50 nm gold nanowires and nanogaps based on a bilayer lift-off process

Sahin,

Albayrak,

Yapici

2024

Nanotechnology

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“…because the ion range in the material (a few nanometers) is much smaller than the typical scale of the wrinkles (fractions of a micrometer). Alternatively, highly ordered anisotropic PDMS patterns have been prepared by replica molding recurring to top-down approaches based on electron beam lithography (EBL) for the fabrication of the master . However, the high costs and limited working area of EBL represent a drawback for device fabrication at the industrial level.…”

Section: Introductionmentioning

confidence: 99%

Infrared Plasmonics via Self-Organized Anisotropic Wrinkling of Au/PDMS Nanoarrays

Barelli

Repetto

Mongeot

2019

ACS Appl. Polym. Mater.

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Polydimethylsiloxane (PDMS) templates are nanopatterned over large areas to form uniaxial wrinkles by air plasma treatment on prestretched samples. Ripple-like structures with tunable height/width aspect ratio are so achieved. The anisotropic uniaxial PDMS modulations represent an ideal platform for the confinement of plasmonic nanowire (NW) arrays by grazing angle Au thermal deposition. This self-organized fabrication method is suitable to be scaled to the industrial level as a single step maskless process. The flexible NW arrays show monodisperse width distribution and exhibit strongly dichroic optical properties. Localized surface plasmon resonances (LSPR) of dipolar and multipolar character are excited when light is linearly polarized orthogonally to the NW major axis. The LSPR wavelength can be easily tuned across a remarkably large spectral range from 600 to 1200 nm by engineering the NW width and the PDMS ripple morphology. The PDMS/Au NW nanocomposite material also shows relevant performance as a transparent flexible electrode with sheet resistance on the order of 15 Ω/sq, a figure of merit which is competitive with the best transparent conductive oxides.

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“…Nano-patterned semiconductor substrates have been widely used in many microelectronic and optoelectronic devices [1][2][3]. Techniques [4][5][6] such as electron beam lithography, focused ion beam lithography and nano-imprint lithography have been applied in the nano-fabrication. To realize miniaturization and performance enhancement of the devices, nanostructures with high resolution in etching depth as well as line width are demanded.…”

Section: Introductionmentioning

confidence: 99%

Laser induced nano-patterning with atomic-scale thickness on an InAs/GaAs surface

Zhang

Shi

Yang

et al. 2018

Semicond. Sci. Technol.

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Nano-patterned substrates fabricated by different techniques have been widely applied in high performance semiconductor devices. For the influence of surface morphology on semiconductor electronic properties and epitaxy growth, there is an increasing interest to realize atomic-scale surface modification by a simple and effective method. In this study, laser induced nanopatterning with atomic-scale thickness on an InAs/GaAs surface was studied in both atmosphere and vacuum environments. Periodic nano-grooves with an average depth of 1 to 2 atomic layers were fabricated by focused laser spot scanning in the air. The depth and width of nano-grooves increase with the laser energy intensity. The result of nano-patterning is attributed to atom desorption stimulated by photon-induced electronic excitation. To explore the situation in the vacuum, in situ two-beam laser interference was applied during InAs/GaAs sample MBE growth. Periodic InGaAs nano-islands were fabricated, which show significant influence on subsequent crystal growth. The formation of ordered InAs quantum dots agreeing with the atomic layer nano-pattern demonstrates the potential application of the technique in sitecontrolled quantum dot growth.

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The fabrication of 3-D nanostructures by a low- voltage EBL

Cited by 11 publications

References 7 publications

Optimization of e-beam lithography parameters for nanofabrication of sub-50 nm gold nanowires and nanogaps based on a bilayer lift-off process

Optimization of e-beam lithography parameters for nanofabrication of sub-50 nm gold nanowires and nanogaps based on a bilayer lift-off process

Infrared Plasmonics via Self-Organized Anisotropic Wrinkling of Au/PDMS Nanoarrays

Laser induced nano-patterning with atomic-scale thickness on an InAs/GaAs surface

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