The fabrication of 10-channel DFB laser array by SAG technology

Zhang, Can; Liu, Song; Zhu, Hongtu; Han, Liangshun; Lu, Dan; Chen, Ji; Zhao, Lingjuan; Wang, Wei

doi:10.1016/j.optcom.2013.08.055

Cited by 11 publications

(4 citation statements)

References 28 publications

(29 reference statements)

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“…The SAG technique that grows multiple-quantum-well (MQW) structures on oxide pattern-masked substrates by metal organic vapor phase epitaxy (MOVPE) can be used to vary the gain material from laser to laser for WLAs. 10,21,27,28,35) It is especially important for WLAs covering a very wide wavelength range. The SAG can be used to vary the lasing wavelength by varying the ERIs of gratings, but it is challenging for making WLAs with tight channel spacing owing to the fluctuation in epitaxial growth.…”

Section: Overview Of Wla Resultsmentioning

confidence: 99%

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Wavelength division multiplexing laser arrays for applications in optical networking and sensing: Overview and perspectives

Lee

Pukhrambam

2018

Jpn. J. Appl. Phys.

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Wavelength division multiplexing (WDM) laser arrays (WLAs) can provide compact light sources for optical telecommunications, interconnections, switching, and optical sensing applications. The technologies to realize WLAs are reviewed and discussed with focus on wavelength registration and manufacturing complexity. WLAs can be realized in monolithic or hybrid integration approaches. The issues and challenges for applying monolithic or hybrid integration to realize WLAs will be discussed. The laser arrays based on hybrid laser structure and the silicon photonics foundry fabrication model will be highlighted.

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Section: Overview Of Wla Resultsmentioning

confidence: 99%

“…Several research groups reported on the use of the selective-area epitaxial growth (SAG) technique to make WLAs. 10,11) Both the gain and grating materials can be varied from laser to laser by using the SAG scheme.…”

Section: Simple Grating-based Wlasmentioning

confidence: 99%

Wavelength division multiplexing laser arrays for applications in optical networking and sensing: Overview and perspectives

Lee

Pukhrambam

2018

Jpn. J. Appl. Phys.

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“…The width of SiO 2 strips was 8μm with a 22μm interval. Two InGaAsP separate confinement heterostructure (SCH) layers and MQWs were then grown on the wafer with SiO 2 strips [6]. The epitaxial layer structure of EML is shown in Table 1 The SiO 2 strips influenced the pressure and flow of reacting gas during epitaxy.…”

Section: Fig1 Schematic View Of An Eml Chipmentioning

confidence: 99%

The effect of zinc diffusion on extinction ratio of MQW electroabsorption modulator integrated with DFB laser

et al. 2014

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Monolithically integrated electroabsorption modulated lasers (EML) are widely being used in the optical fiber communication systems, due to their low chip, compact size and good compatible with the current communication systems. In this paper, we investigated the effect of Zinc diffusion on extinction ratio of electroabsorption modulator (EAM) integrated with distributed feedback laser (DFB).EML was fabricated by selective area growth (SAG) technology. The MQW structure of different quantum energy levels was grown on n-type InP buffer layer with 150nm thick SiO2 parallel stripes mask by selective area metal-organic chemical vapor deposition (MOCVD). A 35nm photoluminescence wavelength variation was observed between the laser area (λ PL =1535nm) and modulator area (λ PL =1500nm) by adjusting the dimension of parallel stripes. The grating (λ=1550nm) was fabricated in the selective area. The device was mesa ridge structure, which was constituted of the DFB laser, isolation gap and modulator. The length of every part is 300μm, 50μm, and 150μm respectively.Two samples were fabricated with the same structure and different p-type Zn-doped concentration, the extinction ratio of heavy Zn-doped device is 12.5dB at -6V. In contrast, the extinction ratio of light Zn-doped device is 20dB at -6V, that was improved for approximate 60%. The different Zn diffusion depth into the MQW absorption layer was observed by Secondary ion mass spectrometer (SIMS). The heavy Zn-doped device diffused into absorption layer deeper than the light Zn-doped device, which caused the large non-uniformity of the electric field in the MQW layer. So the extinction ratio characteristics can be improved by optimizing the Zn-doped concentration of p-type layer.

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“…Typical techniques include the butt-joint technique and the quantum well intermixing (QWI) technique. The butt-joint technique needs an additional material growth step, which requires careful optimization of the growth conditions [10]. To obtain a large wavelength blue shift by the QWI process [11], it is more or less usually accompanied by deterioration of material quality.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of Low-Cost Multiwavelength Laser Arrays for OLTs in WDM-PONs by Combining the SAG and BIG Techniques

et al. 2015

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We present the fabrication of a low-cost multiwavelength laser array monolithically integrated with a passive optical combiner for optical line terminals (OLTs) in wavelength-division multiplexing (WDM) passive optical networks (PONs). By combining the upper separate confinement heterostructure layer selective area growth technique and the bundle integrated guide technique, both multiwavelength emission with highly uniform spacing and low-loss passive-waveguide material can be obtained in a single metal-organic chemical vapor deposition (MOCVD) growth step, which greatly simplifies the fabrication of the device. A prototype laser array, which has four distributed feedback (DFB) laser elements and a multimode interference coupler as combiner, is successfully fabricated. The shallow ridge structure of the DFB lasers and the deep ridge structure of the passive waveguides are obtained by a single dry etching step, which further eases the device fabrication. The properties of the device are measured and discussed. The results indicate that our method is promising for fabricating cost-effective OLT light sources for WDM-PONs.

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The fabrication of 10-channel DFB laser array by SAG technology

Cited by 11 publications

References 28 publications

Wavelength division multiplexing laser arrays for applications in optical networking and sensing: Overview and perspectives

Wavelength division multiplexing laser arrays for applications in optical networking and sensing: Overview and perspectives

The effect of zinc diffusion on extinction ratio of MQW electroabsorption modulator integrated with DFB laser

Fabrication of Low-Cost Multiwavelength Laser Arrays for OLTs in WDM-PONs by Combining the SAG and BIG Techniques

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