The fabrication and photoresponse of ZnO/diamond film heterojunction diode

Semiconductor ultraviolet photodetectors based on ZnO and MgxZn1−xO

“…Diamond substrate is considered as another potential substrate suitable for ZnO-based heterostructure photodiodes, which might be sufficient for special applications [162]. Huang et al demonstrated a ZnO/diamond UV photodiode configured with highly c-plane oriented ZnO grown on freestanding diamond by hot filament chemical vapour deposition (HFCVD) [163]. The photodiode displays a high rectification ratio of 8 × 10 4 at ± 3.5 V and a low turn-on voltage of 1.6 V. The peak responsivity locating at 370 nm exceeds 0.2 A W −1 at reversed 3 V bias, comparable to that of commercial GaN UV photodiodes.…”

High performance GZO/p-Si heterojunction diodes fabricated by reactive co-sputtering of Zn and GaAs through the control of GZO layer thickness

“…2,3 This is mainly due to the elevated energy barrier formed at the junction interface with large band offsets and barrier height inhomogeneities. [7][8][9]19 Nonetheless, a number of efforts have been made towards the fabrication of ZnO-based heterojunctions, substituting p-type ZnO with p-type, SiC, 20 Si, 21 NiO, 22 CuI, 23 diamond, 24 GaN 25 and CuO. 26 The n-ZnO/p-Si heterojunction diodes are specially attractive, owing to the availability and quality of crystalline silicon, as well as the possibility of hybrid integration of ZnO based devices with high density silicon technology.…”

Heteroepitaxial ZnO films on diamond: Optoelectronic properties and the role of interface polarity

“…Consequently, the attempts to realize p-diamond/ n-ZnO heterodiodes did not yield promising results. 9,10 Thus, the novel fabrication of high-quality ZnO on diamond by molecular beam epitaxy will be addressed first, as it is a fundamental requirement for device realization.…”