We present a highly efficient hybrid heterojunction photovoltaic (PV) cell with a colloidal inorganic nanocrystal (NC) electron donor and an organic electron acceptor. The heterojunction is formed by a thin film of cross-linked PbS NCs and a C 60 layer. Compared to the PbS-only PV cell, the heterojunction device has improved the power conversion efficient (PCE) from 1.6 % to 2.2 %. The C 60 layer effectively prevents the excitons from quenching at the NC/metal interface, which is demonstrated with a significant improvement of the fillfactor (FF) of the heterojunction devices. In addition, a larger open-circuit voltage (V OC ) in the heterojunction devices suggests that the electrons in C 60 can readily transfer to the PbS NCs through the NC surface linkers. This is supported by the measured optical absorption spectrum of the hybrid system.
BackgroundSolution processable thin film photovoltaic (PV) devices based on organic electron donor and acceptor materials have recently achieved over 6 % power conversion efficiency (PCE).[1] Owing to the larger energy bandgap (>2 eV) of those organic materials, solely the visible region in the solar spectrum can be harvested. Leaving 50 % of the total spectrum irradiance abandoned. Colloidal semiconductor nanocrystals (NCs) are believed as an alternative or a complimentary material that is compliable with the low-cost solution processes. By controlling the size of the NCs during the synthesis, a tunable absorption from near infrared (NIR) to visible spectrum can be achieved. PbS NC is one of the prototypical materials used in PV application. Schottky-type PV cells based on PbS NCs have been reported with a PCE of 1.7-1.8%. [2,3]. It has also been demonstrated that a Schottky-type PV cell fabricated with a single layer of ternary PbS X Se 1-X NCs can achieve a PCE of 3.3 %.[3] However, the maximum opencircuit voltage (V OC ) of such Schottky-type PV cell is limited to the half of the energy bandgap (Eg), V OC < Eg/2e. Moreover, surface recombination centers as commonly presented in the semiconductor/metal interfaces also lower the quantum yield of the devices. Therefore, it is believed that a p-n or a p-i-n type heterojunction device can further increase the device efficiency by increasing the V OC and shifting the exciton dissociation region away from the metal interface.