The Experimental and Modeling Study of Femtosecond Laser-Ablated Silicon Surface

Abstract

In this study, monocrystalline silicon was ablated by a single 1030 nm femtosecond laser pulse. Variable laser fluence (0.16–3.06 J/cm2) was used, and two ablation thresholds (0.8 and 1.67 J/cm2) were determined experimentally. A two-temperature model was established based on the dynamic optical model, the carrier density model, and the phase explosion model for comparison with experimental results. The melting (0.25 J/cm2) and vaporization (0.80 J/cm2) thresholds were determined when the lattice temperature reached melting and boiling points, so as to overcome the latent heat. Finally, the ablation depth was calculated using the phase explosion model, and the ablation threshold was 1.5 J/cm2. The comparisons show that the proposed model can predict the ablation depth obtained by a single femtosecond laser pulse.

New aspects of femtosecond laser ablation of Si in water: a material perspective

“…Theoretical models have been used to interpret their experimental results and elaborated on the significance of fs lasers for precise micro/nano processing. Recently, Liu and Cheng [58] used the two temperature model and carrier density model to simulate experiments on the fs interaction of Si at two different fluences and determined the corresponding ablation thresholds. Similarly, Zhang et al [59] have performed finite element simulations to study the morphology of Si surfaces ablated by ns laser.…”