1999
DOI: 10.1002/(sici)1521-3951(199904)212:2<263::aid-pssb263>3.0.co;2-v
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The Exciton Transition Energies in Symmetric Double GaAs/AlxGa1-xAs Quantum Wells

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“…These devices may include infrared photodetectors, resonant tunneling diodes and ballistic transistors. Moreover it is possible to modulate the absorption spectra with some external perturbations from the states of the valence band to final states related to randomly distributed donor impurities along the heterostructure [2,9].…”
Section: Introductionmentioning
confidence: 99%
“…These devices may include infrared photodetectors, resonant tunneling diodes and ballistic transistors. Moreover it is possible to modulate the absorption spectra with some external perturbations from the states of the valence band to final states related to randomly distributed donor impurities along the heterostructure [2,9].…”
Section: Introductionmentioning
confidence: 99%