The evolution of microstructure in Al-2 Pct Cu thin films: Precipitation, dissolution, and reprecipitation

Frear, D. R.; Sanchez, John E.; Romig, A. D.; Morris, J. W.

doi:10.1007/bf02646989

Cited by 77 publications

(27 citation statements)

References 20 publications

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“…No remnant small as-deposited (9 particles are evident. (TEM in-situ annealing experiments [11] confirmed the O dissolutionheterogeneous reprecipitation processes for annealing at these temperatures.) Grain growth has also been extensive during ali the RTA anneals, Table I RTA annealingat 405°C for 15 rain.…”

Section: Resultsmentioning

confidence: 69%

“…Also shown are the elongated (9 precipitates along grain boundaries [11]. No remnant small as-deposited (9 particles are evident.…”

Section: Resultsmentioning

confidence: 91%

“…Plan view TEM microscopy of the as-deposited films, figure 1 distributed at grain boundaries and grain interiors. Cross-section TEM microscopy [11] showed the relatively even distribution of ® through the film thickness. The Al grain sizes are 0.10 lam and 0.14 lain for the 0.4 I.tmand 0.8 lam films, respectively.…”

Section: Resultsmentioning

confidence: 98%

“…Substrates were (106) 100 mm Si wafers coated with a 1.65 I.tm cvd borosilicate glass deposited on the fr-ht side. (See references [11,13] for details of thin film sample fabrication). The FA cycle was an industry standard "alloy" or "sinter" cycle, 4250C for 35 minutes with an automated slow (20 minutes each) heat up and and cool down during insertion or withdrawal from the constant temperature furnace chamber.…”

Section: Methodsmentioning

confidence: 99%

“…Roberts and Dobson [9] The results presented here are a portion of the work undertaken to describe the detailed precipitate reactions, Al grain growth behavior and possible growth-precipitate interactions in AI-2% Cu thin films during thermal treatments, including accelerated electromigration testing. Previously we have reported [11] on the O (CuAI2) reactions in these films during annealing between 345°C and 4720C. Recently, O coarsening and the effects of concurrent Al grain growth were studied [12] in more detail.…”

Section: Introductionmentioning

confidence: 99%

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Grain Growth in Al-2% Cu Thin Films

Sanchez¹,

Frear²,

Morris

1992

MSF

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DISCLAIMERThis document was prepared as an account of work sponsored by the United States Government. Neither the United States Government nor any agency thereof, nor The Regents of the University of California, nor any of their employees, makes any warranty, express or implied, or assumes any legal liability or responsibility for the accuracy, completeness, or usefulness of any ir_ormation, apparatus, product, or process disclosed, or represents that its use would not infringe privately owned rights. Reference herein to any specific commercial product, process, or service by its trade name, _ademark, manufacturer, or otherwise, does not necessarily constitute or imply its endorsement, recommendation, or favoring by the United States Government or any agency thereof, or The Regents of the University of California. The views and opi_ons of authors expressed herein do not necessarily state or reflect those of the United States Government or any agency thereof or The Regents of the University of California and shall not be used for advertising or produc: endorsement purposes. J 'Lawrence Berkeley Laboratory is an equal opportunity employer. LBL--31203 DE92 002263Grain Growth in AI-2% Cu Thin Films ABSTRACTThe grain size and grain growth kinetics in sputter deposited AI-2% Cu films on silicon substrates were determined by TEM for various film thicknesses and anneal times, temperatures and methods. Grain sizes were found to be typically lognomaally distributed. The as-deposited grain size (do) dependence on film thickness (TIl) was found to be do = C TH1/2, due to competitive grain growth during film formation. Annealed grain size (d) after Rapid Thermal Annealing (RTA) for time (t) at temperature (T) is described by the general equation d -do = C TH 0.7 {t exp (-AEa/kT) }1/8,where ZkEa= 0.85 ev for 0.4 I.tm films and AEa = 1.1 ev for 0.8 I.tm films. Grain growth is largely saturated for these anneals. Grain growth is shown to be more extensive during RTA anneals than furnace annealing and more extensive in 0.4 l.tm films than 0.8 I.tm films for equivalent RTA cycles. The results are discussed in terms of models, simulations and previous results of grain growth in thin metal films.

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Section: Resultsmentioning

confidence: 69%

“…Also shown are the elongated (9 precipitates along grain boundaries [11]. No remnant small as-deposited (9 particles are evident.…”

Section: Resultsmentioning

confidence: 91%

Section: Resultsmentioning

confidence: 98%

Section: Methodsmentioning

confidence: 99%