The evolution of conducting filaments in forming-free resistive switching Pt/TaO<sub>x</sub>/Pt structures

Kurnia, Fran; Liu, Chunli; Jung, C. U.; Lee, B. W.

doi:10.1063/1.4802263

Cited by 41 publications

(26 citation statements)

References 15 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…During the SET process which switches the device from HRS back to the LRS, the CFs are regenerated preferentially along similar paths; therefore, the V SET shows less fluctuation. On the other hand, the FR devices usually require higher and wider ranged set voltages to reconnect the CFs due to the insulating nature of the oxide film [8]. In this point of view, it is preferred to use Pt/CFO-2/Pt structures for RRAM applications because most of the CFO-2 based devices are FF with a narrowly distributed V SET , as shown in the first two panels of Figure 6.…”

Section: Resultsmentioning

confidence: 99%

“…When the MOM structure is electrically stimulated by either a current or voltage, the resistance of the MOM structure can be switched between a high resistance state (HRS) or ‘0’ and a low resistance state (LRS) or ‘1’. Popular oxide thin films that have been studied for RRAM applications include binary oxides such as NiO [7], TaO x [8], and HfO 2 [9], perovskites such as Pr 1- x Ca x MnO 3 [10], La 0.7 Sr 0.3 MnO 3 [11], and BiFeO 3 [12]. For unipolar resistance switching (URS), the SET and RESET processes, which refer to the switching of the MOM structure from a HRS to a LRS and vice versa , respectively, can be induced by an applied voltage regardless of its polarity.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Regulation of the forming process and the set voltage distribution of unipolar resistance switching in spin-coated CoFe2O4 thin films

et al. 2015

Self Cite

View full text Add to dashboard Cite

We report the preparation of (111) preferentially oriented CoFe2O4 thin films on Pt(111)/TiO2/SiO2/Si substrates using a spin-coating process. The post-annealing conditions and film thickness were varied for cobalt ferrite (CFO) thin films, and Pt/CFO/Pt structures were prepared to investigate the resistance switching behaviors. Our results showed that resistance switching without a forming process is preferred to obtain less fluctuation in the set voltage, which can be regulated directly from the preparation conditions of the CFO thin films. Therefore, instead of thicker film, CFO thin films deposited by two times spin-coating with a thickness about 100 nm gave stable resistance switching with the most stable set voltage. Since the forming process and the large variation in set voltage have been considered as serious obstacles for the practical application of resistance switching for non-volatile memory devices, our results could provide meaningful insights in improving the performance of ferrite material-based resistance switching memory devices.

show abstract

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Regulation of the forming process and the set voltage distribution of unipolar resistance switching in spin-coated CoFe2O4 thin films

et al. 2015

Self Cite

View full text Add to dashboard Cite

show abstract

“…For example, F. Kurnia et al investigated the evolution of oxygen vacancies based CF and achieve the forming-free RS in Pt/TaO x /Pt structure. 8 By applying different voltage on the 1-transistor-1-memoristor (1T1M) device, F. Miao et al successively tuned the conduction channel in TaO x which related to the oxygen concentration, and obtain varied switching behavior. 9 Moreover, Ta was used instead of Pt as top electrode on TaO x by J. S. Chen's group to form an oxygen vacancy reservoir of supplying or storing the oxygen vacancies at the Ta/TaO x interface, and further realize the multilevel switching property.…”

mentioning

confidence: 99%

A ZnTaOx Based Resistive Switching Random Access Memory

Zheng

Zhao

Leck

et al. 2014

ECS Solid State Letters

View full text Add to dashboard Cite

The improved resistive switching performance of TaO x by introducing ZnO was reported in this paper. By co-sputtering, the ZnTaO x device shows better endurance, lower operating voltage and more uniform resistance distribution. The improvement is mainly due to the more abundant intrinsic defects such as oxygen vacancies which facilitates the formation of conductive filaments in the oxide compound.Among various non-volatile memory devices, the resistance switching random access memory (RRAM) has outstood for its highdensity storage capability, low operation voltage/current and fast switching speed. Besides those intensively studied oxide materials for the RRAM fabrication, such as TiO 2, 1 NiO, 2 ZnO, 3 HfO x 4 and ZrO 2, 5 recently Ta 2 O 5 or TaO x based RRAM device has been frequently investigated due to its excellent endurance performance and switching speed. Based on the filament dynamic mechanism, both unipolar and bipolar resistive switching (RS) behavior were reported with desirable endurance and retention properties. 6,7 Similar as other oxide-based devices, the formation and rupture of conductive filament (CF) which is related to the chemical composition of oxygen determine the RS behavior in TaO x RRAM. One of the effective ways to obtain better RS performance in TaO x RRAM is how well the oxygen ion or oxygen vacancy concentration is controlled. Therefore, quite some work has been carried out to understand the behavior of oxygen vacancies in resistance switching. For example, F. Kurnia et al. investigated the evolution of oxygen vacancies based CF and achieve the forming-free RS in Pt/TaO x /Pt structure. 8 By applying different voltage on the 1-transistor-1-memoristor (1T1M) device, F. Miao et al. successively tuned the conduction channel in TaO x which related to the oxygen concentration, and obtain varied switching behavior. 9 Moreover, Ta was used instead of Pt as top electrode on TaO x by J. S. Chen's group to form an oxygen vacancy reservoir of supplying or storing the oxygen vacancies at the Ta/TaO x interface, and further realize the multilevel switching property. 10 Here we demonstrate another way to engineer the oxygen vacancies in TaO x and result in better RS performance. By mixing various oxides with TaO x , the concentration of oxygen vacancies could be adjusted, and among them, ZnO shows the best improvement of operation parameters.The simplest metal-insulator-metal (MIM) structure was applied to fabricate the RRAM testing cell. The commercial ITO glass was employed as the substrate and bottom electrode. All the oxide films were deposited by RF magnetron sputtering system. Indium balls pressed on top of the sample were used as the top electrodes. The sputtering power for all oxides (Ta 2 O 5 , ZnO Ga 2 O 3 and NiO) were the same (100 W) and the sputtering chamber was kept in the Ar atmosphere (flow rate 30 sccm) with the pressure of 5 × 10 −3 Torr at room temperature. Besides the pure TaO x device, the TaO x was cosputtered with other 3 targets respectively to form ZnTaO x , GaTaO x and ...

show abstract

“…6,7 The Cu top electrodes were deposited on the TaO x thin film by e-beam evaporation using a 50 Â 50 lm 2 square-shaped shadow mask. Resistive switching measurements were performed at room temperature by using an Agilent B1500A semiconductor parameter analyzer in a DC voltage sweep mode under different setting values of the compliance current (I c ).…”

mentioning

confidence: 99%

Compliance current induced non-reversible transition from unipolar to bipolar resistive switching in a Cu/TaOx/Pt structure

Kurnia

Jung

Lee

et al. 2015

Applied Physics Letters

Self Cite

View full text Add to dashboard Cite

Unipolar resistive switching (URS) as well as bipolar resistive switching (BRS) behaviors in a Cu/TaOx/Pt structure were investigated. Upon increasing the compliance current (Ic), the current-voltage characteristics of the Cu/TaOx/Pt structure showed a URS behavior at Ic = 0.1 mA then experienced a non-reversible transition from the URS to a BRS mode at Ic = 10 mA. Through a detailed analysis of the electrical properties in each resistance state of URS and BRS, we revealed that the permanent transition from the URS to the BRS mode was induced by the formation of stronger Cu metal conductive filaments within the TaOx thin film. More interestingly, both URS and BRS modes were governed by the formation and rupture of conductive filaments, whereas the rupture of these filamentary paths in BRS was proposed due to both Joule heating and electric field effects.

show abstract

The evolution of conducting filaments in forming-free resistive switching Pt/TaO_x/Pt structures

Cited by 41 publications

References 15 publications

Regulation of the forming process and the set voltage distribution of unipolar resistance switching in spin-coated CoFe2O4 thin films

Regulation of the forming process and the set voltage distribution of unipolar resistance switching in spin-coated CoFe2O4 thin films

A ZnTaOx Based Resistive Switching Random Access Memory

Compliance current induced non-reversible transition from unipolar to bipolar resistive switching in a Cu/TaOx/Pt structure

Contact Info

Product

Resources

About

The evolution of conducting filaments in forming-free resistive switching Pt/TaOx/Pt structures

Cited by 41 publications

References 15 publications

Regulation of the forming process and the set voltage distribution of unipolar resistance switching in spin-coated CoFe2O4 thin films

Regulation of the forming process and the set voltage distribution of unipolar resistance switching in spin-coated CoFe2O4 thin films

A ZnTaOx Based Resistive Switching Random Access Memory

Compliance current induced non-reversible transition from unipolar to bipolar resistive switching in a Cu/TaOx/Pt structure

Contact Info

Product

Resources

About

The evolution of conducting filaments in forming-free resistive switching Pt/TaO_x/Pt structures