Abstract:Theoretical studies on BC(n) (n=1-6) clusters are carried out using density functional theory, Møller-Plesset second-order perturbation theory (MP2), coupled-cluster calculations including up to triple excitations (CCSD(T)), and higher-level approaches. All possible isomers depending on the positions of the boron atom are generated and the lowest-energy isomers are determined for doublet and quartet electronic states. The three potential evolution paths of the clusters are determined as a function of their siz… Show more
“…The Si atom prefers the external position of the skeleton and tends to form bonds with its two neighboring B atoms. The larger B 7 Si cluster is constructed by doping Si-atoms on the symmetry axis of the B n host, which leads to the bonding of the silicon to the ring boron atoms through a number of hyper-coordination. Calculations of the thermochemical properties of B n Si 0/À clusters, such as binding energies (BE), heats of formation at 0 K (DH f 0 ) and 298 K (DH f [298] ), adiabatic (ADE) and vertical (VDE) detachment energies, and dissociation energies (D e ), are performed using the high accuracy G4 and complete basis-set extrapolation (CCSD(T)/CBS) approaches.…”
Section: Introductionmentioning
confidence: 99%
“…The planar structures are dominant for small B n Si clusters with n 5. The B 6 Si molecule represents a geometrical transition with a quasiplanar geometry, and the first 3D global minimum is found for the B 7 Si cluster. The small neutral B n Si clusters can be formed by substituting the single boron atom of B n + 1 by silicon.…”
Section: Introductionmentioning
confidence: 99%
“…Unlike the B n C clusters where the B 7 C was reported to be a planar structure (C s ), [54] the global minimum of B 7 Si is a 3D structure 7 n.1 (C 2v , 2 B 1 ) that is distorted from a high symmetry form (C 6v ), with Si located on the C 6 axis of a bi-capped hexagonal ring. The planar "ribbon" structure 7 n.2, having a similar shape to the global minimum B 7 C, is the second isomer with a relative energy of 7.4 kcal mol À1 .…”
mentioning
confidence: 97%
“…Other planar forms 7 n.3 and 7 n.4 rather represent transition states. Following attachment of one excess electron, the high symmetry 7 a.1 (C 6v ) becomes the global minimum of B 7 Si À . 7 a.2 (C s ) turns out to be the second isomer with relative energy of 7.4 kcal mol…”
mentioning
confidence: 99%
“…The first 3D global minimum in the series of B n Si is found for B 7 Si. Unlike the B n C clusters where the B 7 C was reported to be a planar structure (C s ), [54] the global minimum of B 7 Si is a 3D structure 7 n.1 (C 2v , 2 B 1 ) that is distorted from a high symmetry form (C 6v ), with Si located on the C 6 axis of a bi-capped hexagonal ring.…”
We perform a systematic investigation on small silicon-doped boron clusters B(n)Si (n=1-7) in both neutral and anionic states using density functional (DFT) and coupled-cluster (CCSD(T)) theories. The global minima of these B(n)Si(0/-) clusters are characterized together with their growth mechanisms. The planar structures are dominant for small B(n)Si clusters with n≤5. The B(6)Si molecule represents a geometrical transition with a quasi-planar geometry, and the first 3D global minimum is found for the B(7)Si cluster. The small neutral B(n)Si clusters can be formed by substituting the single boron atom of B(n+1) by silicon. The Si atom prefers the external position of the skeleton and tends to form bonds with its two neighboring B atoms. The larger B(7)Si cluster is constructed by doping Si-atoms on the symmetry axis of the B(n) host, which leads to the bonding of the silicon to the ring boron atoms through a number of hyper-coordination. Calculations of the thermochemical properties of B(n)Si(0/-) clusters, such as binding energies (BE), heats of formation at 0 K (ΔH(f)(0)) and 298 K (ΔH(f)([298])), adiabatic (ADE) and vertical (VDE) detachment energies, and dissociation energies (D(e)), are performed using the high accuracy G4 and complete basis-set extrapolation (CCSD(T)/CBS) approaches. The differences of heats of formation (at 0 K) between the G4 and CBS approaches for the B(n)Si clusters vary in the range of 0.0-4.6 kcal mol(-1). The largest difference between two approaches for ADE values is 0.15 eV. Our theoretical predictions also indicate that the species B(2)Si, B(4)Si, B(3)Si(-) and B(7)Si(-) are systems with enhanced stability, exhibiting each a double (σ and π) aromaticity. B(5)Si(-) and B(6)Si are doubly antiaromatic (σ and π) with lower stability.
“…The Si atom prefers the external position of the skeleton and tends to form bonds with its two neighboring B atoms. The larger B 7 Si cluster is constructed by doping Si-atoms on the symmetry axis of the B n host, which leads to the bonding of the silicon to the ring boron atoms through a number of hyper-coordination. Calculations of the thermochemical properties of B n Si 0/À clusters, such as binding energies (BE), heats of formation at 0 K (DH f 0 ) and 298 K (DH f [298] ), adiabatic (ADE) and vertical (VDE) detachment energies, and dissociation energies (D e ), are performed using the high accuracy G4 and complete basis-set extrapolation (CCSD(T)/CBS) approaches.…”
Section: Introductionmentioning
confidence: 99%
“…The planar structures are dominant for small B n Si clusters with n 5. The B 6 Si molecule represents a geometrical transition with a quasiplanar geometry, and the first 3D global minimum is found for the B 7 Si cluster. The small neutral B n Si clusters can be formed by substituting the single boron atom of B n + 1 by silicon.…”
Section: Introductionmentioning
confidence: 99%
“…Unlike the B n C clusters where the B 7 C was reported to be a planar structure (C s ), [54] the global minimum of B 7 Si is a 3D structure 7 n.1 (C 2v , 2 B 1 ) that is distorted from a high symmetry form (C 6v ), with Si located on the C 6 axis of a bi-capped hexagonal ring. The planar "ribbon" structure 7 n.2, having a similar shape to the global minimum B 7 C, is the second isomer with a relative energy of 7.4 kcal mol À1 .…”
mentioning
confidence: 97%
“…Other planar forms 7 n.3 and 7 n.4 rather represent transition states. Following attachment of one excess electron, the high symmetry 7 a.1 (C 6v ) becomes the global minimum of B 7 Si À . 7 a.2 (C s ) turns out to be the second isomer with relative energy of 7.4 kcal mol…”
mentioning
confidence: 99%
“…The first 3D global minimum in the series of B n Si is found for B 7 Si. Unlike the B n C clusters where the B 7 C was reported to be a planar structure (C s ), [54] the global minimum of B 7 Si is a 3D structure 7 n.1 (C 2v , 2 B 1 ) that is distorted from a high symmetry form (C 6v ), with Si located on the C 6 axis of a bi-capped hexagonal ring.…”
We perform a systematic investigation on small silicon-doped boron clusters B(n)Si (n=1-7) in both neutral and anionic states using density functional (DFT) and coupled-cluster (CCSD(T)) theories. The global minima of these B(n)Si(0/-) clusters are characterized together with their growth mechanisms. The planar structures are dominant for small B(n)Si clusters with n≤5. The B(6)Si molecule represents a geometrical transition with a quasi-planar geometry, and the first 3D global minimum is found for the B(7)Si cluster. The small neutral B(n)Si clusters can be formed by substituting the single boron atom of B(n+1) by silicon. The Si atom prefers the external position of the skeleton and tends to form bonds with its two neighboring B atoms. The larger B(7)Si cluster is constructed by doping Si-atoms on the symmetry axis of the B(n) host, which leads to the bonding of the silicon to the ring boron atoms through a number of hyper-coordination. Calculations of the thermochemical properties of B(n)Si(0/-) clusters, such as binding energies (BE), heats of formation at 0 K (ΔH(f)(0)) and 298 K (ΔH(f)([298])), adiabatic (ADE) and vertical (VDE) detachment energies, and dissociation energies (D(e)), are performed using the high accuracy G4 and complete basis-set extrapolation (CCSD(T)/CBS) approaches. The differences of heats of formation (at 0 K) between the G4 and CBS approaches for the B(n)Si clusters vary in the range of 0.0-4.6 kcal mol(-1). The largest difference between two approaches for ADE values is 0.15 eV. Our theoretical predictions also indicate that the species B(2)Si, B(4)Si, B(3)Si(-) and B(7)Si(-) are systems with enhanced stability, exhibiting each a double (σ and π) aromaticity. B(5)Si(-) and B(6)Si are doubly antiaromatic (σ and π) with lower stability.
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