The evaluation of radiation damage parameter for CVD diamond

Grilj, Veljko; Skukan, Natko; Jakšić, Milko; Pomorski, M.; Kada, Wataru; Kamiya, Toshio; Ohshima, Takeshi

doi:10.1016/j.nimb.2015.12.046

Cited by 16 publications

(9 citation statements)

References 17 publications

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“…A similar lifetime for both charge carriers is observed in most studies . For the sensors in this study, lifetimes

τ_{e} = false(23 \pm 2 false)

ns and

τ_{h} = false(80 \pm 30 false)

ns have been measured with a transient current technique at fluence 10 14 p cm −2 .…”

Section: Charge Collection Efficiency Calculationssupporting

confidence: 80%

“…Another approach toward radiation hard diamond detectors has been to reduce the thickness of the diamond crystal. These membrane detectors, in terms of radiation tolerance, benefit from short collection distance and can be operated at higher voltages . The charge induced by MIPs, however, is directly proportional to the sensor thickness, which makes membrane detectors unsuitable for MIP detection.…”

Section: Introductionmentioning

confidence: 99%

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Irradiated Single Crystal Chemical Vapor Deposition Diamond Characterized with Various Ionizing Particles

Naaranoja

Golovleva

Gädda

et al. 2019

Physica Status Solidi (a)

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The radiation hardness of diamond at the sensor level is studied by irradiating five sensors and studying them with various particle sources, without making any modifications to the sensors in between. The electronics used in the characterization is not irradiated to ensure that any observed effect is merely due to the sensor. Three sensors have received a fluence of 10 14 protons cm À2 and two 5⋅10 15 protons cm À2 . At the lower fluence, the impact on the charge collection efficiency is very small, when the applied bias voltage is above 1 V μm À1 . For the higher fluence, the charge collection efficiency is lower than expected based on earlier studies of diamond radiation hardness on the substrate level. Furthermore, it is noticed that the irradiation has a stronger impact on the signal amplitude recorded with a fast timing than with a charge sensitive amplifier.

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“…A similar lifetime for both charge carriers is observed in most studies . For the sensors in this study, lifetimes

τ_{e} = false(23 \pm 2 false)

ns and

τ_{h} = false(80 \pm 30 false)

ns have been measured with a transient current technique at fluence 10 14 p cm −2 .…”

Section: Charge Collection Efficiency Calculationssupporting

confidence: 80%

Section: Introductionmentioning

confidence: 99%

Irradiated Single Crystal Chemical Vapor Deposition Diamond Characterized with Various Ionizing Particles

Naaranoja

Golovleva

Gädda

et al. 2019

Physica Status Solidi (a)

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“…The main problem of these investigations is connected with their radiation hardness (see e.g., some recent works [1][2][3][4][5][6]). Radiation defects induced by protons, neutrons and heavier particles with kinetic energies E ≥ 100 MeV are studied in most works.…”

Section: Introductionmentioning

confidence: 99%

“…If the recoil energy is higher than the lattice binding energy, a host atom will be displaced from its site. Numerical modeling of these processes is carried out, e.g., in [3,5]. In [7], many types of these radiation defects in diamond are well described.…”

Section: Introductionmentioning

confidence: 99%

Evolution in Time of Radiation Defects Induced by Negative Pions and Muons in Crystals with a Diamond Structure

Belousov

2017

Crystals

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Evolution in time of radiation defects induced by negatively-charged pions and muons in crystals with diamond structures is considered. Negative pions and muons are captured by the nucleus and ionize an appropriate host atom, forming a positively-charged radiation defect in a lattice. As a result of an evolution in time, this radiation defect transforms into the acceptor center. An analysis of the full evolution process is considered for the first time. Formation of this acceptor center can be divided into three stages. At the first stage, the radiation defect interacts with a radiation trace and captures electrons. The radiation defect is neutralized completely in Si and Ge for a short time t ≤ 10 −11 s, but in diamond, the complete neutralization time is very large t ≥ 10 −6 s. At the second stage, broken chemical bonds of the radiation defect are restored. In Si and Ge, this process takes place for the neutral radiation defect, but in diamond, it goes for a positively-charged state. The characteristic time of this stage is t < 10 −8 s for Si and Ge and t < 10 −11 s for diamond. After the chemical bonds' restoration, the positively-charged, but chemically-bound radiation defect in diamond is quickly neutralized because of the electron density redistribution. The neutralization process is characterized by the lattice relaxation time. At the third stage, a neutral chemically-bound radiation defect captures an additional electron to saturate all chemical bonds and forms an ionized acceptor center. The existence of a sufficiently big electric dipolar moment leads to the electron capture. Qualitative estimates for the time of this process were obtained for diamond, silicon and germanium crystals. It was sown that this time is the shortest for diamond (≤10 −8 s) and the longest for silicon (≤10 −7 s)

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“…• The ions must traverse the entire sample to avoid polarization effect problems [16] • Homogenous energy loss of ions throughout the depth of the sample, i.e., constant electron-hole pair creation to a total amount of 830,000 electron-hole pairs (~133 fC) per ion. As a result of nearly homogenous e-h pair creation along the ion track, the contribution of electrons and holes to the induced signal is equal; therefore, it is not possible to distinguish the difference between their multiplication phenomena.…”

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confidence: 99%

Charge multiplication effect in thin diamond films

Skukan

Grilj

Sudić

et al. 2016

Applied Physics Letters

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We report herein the enhanced sensitivity for the detection of charged particles in single crystal chemical vapour deposition (scCVD) diamond radiation detectors. The experimental results demonstrate charge multiplication in thin planar diamond membrane detectors, upon impact of 18 MeV O ions, under high electric field conditions. Avalanche multiplication is widely exploited in devices such as avalanche photo diodes, but has never before been reproducibly observed in intrinsic CVD diamond. Because enhanced sensitivity for charged particle detection is obtained for short charge drift lengths without dark counts, this effect could be further exploited in the development of sensors based on avalanche multiplication and radiation detector with extreme radiation hardness

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The evaluation of radiation damage parameter for CVD diamond

Cited by 16 publications

References 17 publications

Irradiated Single Crystal Chemical Vapor Deposition Diamond Characterized with Various Ionizing Particles

Irradiated Single Crystal Chemical Vapor Deposition Diamond Characterized with Various Ionizing Particles

Evolution in Time of Radiation Defects Induced by Negative Pions and Muons in Crystals with a Diamond Structure

Charge multiplication effect in thin diamond films

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