The epitaxy of silicon on alumina—structural effects

Bicknell, R. W.; Joyce, B. A.; Neave, J.H.; Smith, Gerard V.

doi:10.1080/14786436608218986

Cited by 46 publications

(9 citation statements)

References 8 publications

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“…The electrical properties of the silicon deposited at the highest rate used (2.0 ~/min) are the least sensitive to thermal oxidation. This is consistent with observations that rapid coverage (31) of the substrate suppresses contamination of the growing silicon film by gaseous reaction products (32) from the substrate material.…”

Section: Discussionsupporting

confidence: 92%

Epitaxial Growth and Properties of Silicon on Alumina-Rich Single-Crystal Spinel

Cullen

Gottlieb

Wang

et al. 1969

J. Electrochem. Soc.

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Mobilities similar in magnitude to bulk silicon mobilities may be realized in 1.4 to 1.6µ thick films on flame fusion magnesium aluminate spinel, for carrier concentrations greater than ≈2×1016 cm−3 (p‐type). The electrical properties of these films are not significantly altered by thermal oxidation at 1200° C for 1 hr. In this carrier concentration range the electrical characteristics are not highly dependent on the deposition rate within the limits investigated. For carrier concentrations between 5×1015 and 2×1016 cm−3 (p‐type) the “as deposited” film mobilities are near bulk values, but the mobilities are degraded by the thermal oxidation. In this doping range the electrical properties of the oxidized films are critically dependent on the deposition rate. The films deposited at the higher rates are altered less on oxidation than films deposited at the lower rates. Using a growth rate of 2 µ/min, a mobility of 300 cm2/V‐sec (≈80% of bulk) at Nnormala=4×1015 cm−3 may be realized in a film oxidized 1 hr at 1100°C. Below this carrier concentration the mobility of the oxidized films decreases sharply with decreasing carrier concentrations. Minority carrier lifetimes as high as 40 nsec have been realized in 4µ thick films of silicon on spinel. The carrier concentration as a function of temperature and mobility as a function of thickness of silicon on spinel have been measured.

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Section: Discussionsupporting

confidence: 92%

Epitaxial Growth and Properties of Silicon on Alumina-Rich Single-Crystal Spinel

Cullen

Gottlieb

Wang

et al. 1969

J. Electrochem. Soc.

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“…The chemical attack has been discussed by several workers 20 ' 27 and starts with the initial decomposition of SiCl 4 : SiCl 4 (0) + 2 H 2 (g) ±* Si(j) + 4 HCL(g) in a hydrogen ambient at temperatures above about 1050 °C. Early attempts to deposite silicon films on sapphire by the hydrogen reduction of silicon tetrachloride (SiCL 4 ) and trichlorosilane (SiHCL 3 ) produced heavily doped p-type films as well as substantial chemical attack of the sapphire substrate.…”

Section: The Chemical Vapor Deposition Of Sos Filmsmentioning

confidence: 99%

“…When silane (SiH 4 ) is used as the deposition source, 20 ' 28 it is found that the chemical attack can be greatly reduced. By also reducing the deposition temperature and increasing the deposition rate it is possible to reduce the chemical attack below detectable levels and obtain high resistivity silicon films.…”

Section: The Chemical Vapor Deposition Of Sos Filmsmentioning

confidence: 99%

The Properties of Silicon-on-Sapphire Substrates, Devices, and Integrated Circuits

Ipri

1981

Silicon Integrated Circuits

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“…As deposited, the silicon films on sapphire are all p-type because aluminium from the The presence of aluminium in 'as-grown' films produced by the pyrolysis of silane has been confirmed by Dumin and Robinson (1966) using emission spectrographic analysis of the silicon and by Bicknell et al (1966) by determination of the ionization energy. This latter technique has been used in the present work and has shown that aluminium is the p-type impurity present in vacuum deposited films.…”

Section: Film Doping 71 Autodopingmentioning

confidence: 96%

“…Much of the earlier work utilized chemical vapour deposition techniques ; Manasevit and Simpson (1964) and Bicknell et al (1964) deposited films by the reduction of silicon halides, but the pyrolysis of silane is the preferred vapour deposition technique as there is less silicon reaction with the sapphire and films of better crystallinity can be more readily produced. Early work using silane was reported by Mueller and Robinson (1964), Porter and Wolfson (1965), Nolder et al (1965), Bicknell et al (1966).…”

Section: Introductionmentioning

confidence: 99%

The optimum conditions for the vacuum deposition of silicon on sapphire

Lawson¹,

Jefkins²

1970

J. Phys. D: Appl. Phys.

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The conditions under which good quality single-crystal silicon films can be vacuum deposited on to sapphire substrates have been established. The critical deposition parameters, which are shown to be interdependent, are the silicon impingement rate and the sapphire substrate temperature. For any given silicon impingement rate there exists an etching-deposition boundary temperature TE above which the silicon will etch away the sapphire and below which silicon is deposited. The etching-deposition boundary has been determined for the (011bar above 2) and (0001) sapphire orientations for silicon impingement rates in the range 0·1 to 1·5 μm min−1. The silicon film quality, in terms of its electrical mobility, is presented for the two orientations as a function of the parameter TD/TE, where TD is the substrate temperature and TE is the etching-deposition boundary temperature corresponding to the impingement rate used. There is an optimum value of TD/TE; under optimum conditions (111) silicon films deposited on (0001) sapphire have mobilities up to 75% of bulk values but are not very reproducible, while (001) silicon films deposited on (011bar above 2) sapphire have mobilities about 45% of bulk values and are reproducible. Whilst the macroscopic surface finish of the sapphire substrates is important, the crystalline perfection is not and the limited mobilities are ascribed to the high fault density of the films and the high compressive stress resulting from the thermal expansion mismatch.Although ultra-high vacuum techniques have been used throughout the work, evidence is presented which shows that the vacuum environment is not critical.

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The epitaxy of silicon on alumina—structural effects

Cited by 46 publications

References 8 publications

Epitaxial Growth and Properties of Silicon on Alumina-Rich Single-Crystal Spinel

Epitaxial Growth and Properties of Silicon on Alumina-Rich Single-Crystal Spinel

The Properties of Silicon-on-Sapphire Substrates, Devices, and Integrated Circuits

The optimum conditions for the vacuum deposition of silicon on sapphire

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