The epitaxial growth of (111) oriented monocrystalline Si film based on a 4:5 Si-to-SiC atomic lattice matching interface

Yang, Chen; Chen, Zhiming; Hu, Jichao; Ren, Zhanqiang; Lin, Shenghuang

doi:10.1016/j.materresbull.2012.03.018

Materials Research Bulletin

2012

DOI: 10.1016/j.materresbull.2012.03.018

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The epitaxial growth of (111) oriented monocrystalline Si film based on a 4:5 Si-to-SiC atomic lattice matching interface

Chen Yang

Zhiming Chen

Jichao Hu

et al.

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Cited by 6 publications

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The epitaxial growth of (111) oriented monocrystalline Si film based on a 4:5 Si-to-SiC atomic lattice matching interface

Cited by 6 publications

References 10 publications

Growth of hexagonal-shape Si on a 4H–SiC substrate by mixed-source hydride vapor phase epitaxy

Growth of hexagonal-shape Si on a 4H–SiC substrate by mixed-source hydride vapor phase epitaxy

Constructing bidirectional-matched interface between polymer and 2D nanosheets for enhancing energy storage performance of the composites

Low-temperature epitaxial Si on 4H-SiC using metal-induced crystallization

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