2006
DOI: 10.1016/j.cap.2006.01.011
|View full text |Cite
|
Sign up to set email alerts
|

The enhancement of nanocrystallization in amorphous silicon thin films deposited on glass substrate

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Year Published

2014
2014
2020
2020

Publication Types

Select...
3

Relationship

0
3

Authors

Journals

citations
Cited by 3 publications
(1 citation statement)
references
References 9 publications
0
1
0
Order By: Relevance
“…This is supported by the Raman analysis for 300/400 °C samples (Fig. 3) which reveals the coexistence of both nc-Si crystal at 517 cm -1 and amorphous Si at 480 cm -1 [9]. All the above results are different from those of Si quantum dots [8] fabricated using the sputtering method.…”
Section: Resultsmentioning
confidence: 66%
“…This is supported by the Raman analysis for 300/400 °C samples (Fig. 3) which reveals the coexistence of both nc-Si crystal at 517 cm -1 and amorphous Si at 480 cm -1 [9]. All the above results are different from those of Si quantum dots [8] fabricated using the sputtering method.…”
Section: Resultsmentioning
confidence: 66%