The energy dependence on microstructure of (Ti–Al–V) nitrides deposited by dual ion beam sputtering

Hübler, Roberto; Tentardini, E.K.; Blando, Eduardo; Teixeira, Sérgio R.; Vasconcellos, M.Z.; Soares, Mariliz Gutterres; Kamijo, Eiji; Fujiwara, Manabu

doi:10.1016/s0257-8972(99)00320-5

Cited by 7 publications

(7 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Multiple crystal phases of growth structure were detected upon increasing the nitrogen content to an Ar/N 2 ratio of 1:1. These results are in good agreement with the literature which studies investigating structure zone diagram (SZD) and HIPIMS (Hübler et al ., ; Chawla et al ., ; Andres, ; Greczynski et al ., ).…”

Section: Resultsmentioning

confidence: 98%

“…In this paper, the influence of N 2 concentration on the micro‐structural, optical, and surface properties of nanostructured VC thin films is presented. The parameters of RF magnetron sputter deposition affect the ion energy and impact cross‐section, thus influencing grain growth, morphology and crystallographic structure (Hübler et al ., ; Chawla et al ., ; Andres, ). Various N‐rich some structures can be presented (Greczynski et al ., ).…”

Section: Introductionmentioning

confidence: 98%

See 1 more Smart Citation

Nanostructured vanadium carbide thin films produced by RF magnetron sputtering

Pat

Korkmaz

2015

Scanning

View full text Add to dashboard Cite

In this paper, nanostructured vanadium carbide thin films were deposited on glass substrates and their optical and surface properties were analyzed. All produced samples were transparent in the optical region. Refractive index values were calculated using the Drude model. According to contact angle measurements of the coated surfaces, the samples show high wettability. The surface free energies of the samples were found to be very similar. The influence of the nitrogen content in the buffer gas mixture was determined; it was concluded that the microstructure, refractive index, surface morphology, surface free energy, and thickness of thin films can change in response to the nitrogen concentration of the radio frequency (RF) buffer gas.

show abstract

Section: Resultsmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 98%

Nanostructured vanadium carbide thin films produced by RF magnetron sputtering

Pat

Korkmaz

2015

Scanning

View full text Add to dashboard Cite

show abstract

“…They showed that the 1D laser-supported combustion wave model reasonably described the laser-plasma dynamics and the nitriding effects. The energy dependence on microstructure of nitrides deposited by dual ion beam sputtering was investigated by Hubler et al (1999). They showed that the surface nitrogen concentration reached 10 percent of the mean value in the nitrided surface and nitriding treatment improved at pressure range of 0.1-0.7 MPa.…”

Section: Introductionmentioning

confidence: 99%

Laser gas‐assisted nitriding of steel: residual stress analysis

Yilbaş

Arif

Karataş

et al. 2010

Industrial Lubrication and Tribology

View full text Add to dashboard Cite

Purpose -The laser nitriding process is involved with high temperature heating and high cooling rates. This, in turn, results in high levels of thermal stresses in the heated region. Moreover, the residual stress in the heated region remains high after the completion of the heating process, which limits the application of the laser nitriding process. The purpose of this paper is to investigate thermal stresses development and residual stress levels in the nitrided region. Design/methodology/approach -The microstructural changes and residual stress development in the laser gas-assisted nitrided zone are examined. Finite element modeling is carried out to predict temperature and stress fields in the laser nitrided layer. The indentation tests and X-ray diffraction (XRD) technique are used to determine the residual stress levels while previously derived analytical formula is used to predict the residual stress levels in the nitrided region. Findings -The residual stress predicted attains values within 230 MPa, which remains almost uniform in the nitrided layer, except in the surface region. In this case, residual stress reduces slightly due to the low temperature gradient developed in this region and the unconstrained expansion of the free surface. When comparing the residual stress predicted with the measurement results as obtained from the XRD technique as well as the indentation tests, all the results are in reasonably good agreement. The small discrepancies between the experimental data and predictions are attributed to the assumptions made in the model study and the measurement errors.Research limitations/implications -The depth of nitrided layer is limited 60 mm. This limits the applicability of the coating for high wearing rates. Practical implications -The nitrided surface improves the surface properties of steel, which can be used in industry more efficiently. Originality/value -The paper describes an original model study on stress formation, an experiment for surface characterization and estimation of residual stress formation and contains new findings.

show abstract

“…Since an ion gun operates at low pressure, the free path between atoms is long and the ion beam moves directionally. The characteristics studies of film deposition by ion beam sputtering have been reported, [1][2][3] especially film deposition at room temperature. 4) After the dual ion beam sputtering effect were reported, some studies discussed the influences of secondary ion beam irradiation 5) and the sufficient atom mobility of the growing film due to secondary ion bombardment during deposition.…”

Section: Introductionmentioning

confidence: 99%

Study of Aluminum Film Deposition on the Surface of Micro-Trench by Dual Ion Beam Sputtering

Tsai

Kuo

2008

jjap

View full text Add to dashboard Cite

Photoluminescence (PL) spectra from a series of alkylated silicon nanocrystals (SiNCs) derived from porous silicon wafers formed through etching at different current densities have been investigated. SiNCs from wafers etched at high current density (382 mA cm −2 ) emit orange at 609 nm while smaller SiNCs formed from wafers etched at current density of 13 mA cm −2 emit blue (395 nm), yet counter to current understanding of quantum confinement and its role within bandgap engineering, luminescence from SiNCs from wafers etched at intermediate current densities show no transition between the two bands, rather an abrupt switch between them is observed. SEM images show that as the silicon surface undergoes electrochemical etching under high current density many of the smaller nanostructures are destroyed leaving only the larger, more resilient nanostructures available to undergo hydrosilation. X-ray photoelectron spectroscopy measurements identify that both 'blue' and 'orange' SiNCs comprise a large degree of Si-C and Si-O thus the nature of the orange emission is likely related to defect states in silica or suboxide formed near the Si/SiO 2 interface which populate the bandgap and modify the emission character. This is the first paper in the literature to unveil the relationship between etching current density and PL emission bands of alkylated SiNCs. S Online supplementary data available from stacks.iop.org/JPhysD/44/495301/mmedia

show abstract

The energy dependence on microstructure of (Ti–Al–V) nitrides deposited by dual ion beam sputtering

Cited by 7 publications

References 11 publications

Nanostructured vanadium carbide thin films produced by RF magnetron sputtering

Nanostructured vanadium carbide thin films produced by RF magnetron sputtering

Laser gas‐assisted nitriding of steel: residual stress analysis

Study of Aluminum Film Deposition on the Surface of Micro-Trench by Dual Ion Beam Sputtering

Contact Info

Product

Resources

About