The Emission Directionality of Electronic Intraband Transitions in Stacked Quantum Dots

Abstract

We investigate the emission directionality of electronic intraband (intersubband) transitions in stacked coupled quantum dots. Using a well-established eight-band k • p method, we demonstrate that the minor contributions from the valence band mixing into the conduction band govern the polarization and emission directionality of electronic p-to-s-type intraband transitions. Despite that the contribution from the central-cell part to the momentum matrix element is dominant, we find, the contribution from the matrix elements among the envelope functions cannot be neglected. With the help of an artificial cuboidal quantum dot, we show that the vertical emission from intraband transitions can be tuned via the emitter's vertical aspect ratio. Subsequently, we show that these results can be transferred to more realistic geometries of quantum dots and quantum dot stacks and demonstrate that the vertical emission can be enhanced from 23 % to 46 % by increasing the emitter's vertical aspect ratio to the isotropic case with a vertical aspect ratio of 1.0. Therefore, a stacking of a few quantum dotss (∼4 for the investigated structures) is already sufficient to improve the vertical radiation significantly. Additionally, we discuss the impact of the number of stacked QDs as well as the effect of the interdot coupling strength on the radiation properties.