The emergence of high room temperature in-plane and out-of-plane magnetostriction in polycrystalline CoFe2O4 film

Abstract

The polycrystalline CoFe2O4 (CFO) film on cantilever substrate of silicon was grown using pulsed laser deposition (PLD) method and investigated its in-plane and out-of-plane magnetostrictive strain at room temperature (300 K) using the indigenous optical Cantilever Beam Magnetometer (CBM). The film shows a high compressive magnetostrictive strain of ‒ 387 ppm and ‒ 708 ppm for in-plane and out-of-plane configurations, respectively. Considerably, the magnetostrictive strain loops (λ‒H) possess a certain degree of hysteresis with a symmetric butterfly shape. The origin of large compressive magnetostriction of CFO film is attributed to the non-180° domain wall motion followed by 90° domain rotation. The large values of saturation magnetostrictive strain make CFO film a suitable candidate in sensor design for different purposes.

Inkjet Printing of Cobalt Ferrite for Hard Ferromagnetic Thick Films Manufacturing

“…[43] It should also be noted that in both directions, the saturation magnetization features a minimum in correspondence of D10c and maximum values after sintering at 800 and 1000 °C. The discrepancy among the values in the IP and OOP directions suggests that the material features a magnetic anisotropy owing to the aspect ratio [44] and due to stress accumulation during sintering at the CFO/ Si interface. [12]…”

In-Situ Measurement of Magnetoelectric Coupling and Strain Transfer in Multiferroic Nanocomposites of CoFe2O4 and Hf0.5Zr0.5O2 with Residual Porosity

“…Importantly, the thickness of the ferroelectric coating deposited during ALD can be tuned to leave residual porosity that allows the network to flex. In these composites, cobalt ferrite (CoFe 2 O 4 , or CFO) was chosen as the magnetic material, as it has a very high magnetostriction coefficient of 200–300 ppm. , Nanoporous CFO can be readily fabricated using block copolymer templating of sol–gel precursors . Once the magnetostrictive nanoporous CFO films had been synthesized, ALD was used to deposit the ferroelectric.…”