The emergence of high-performance multi-crystalline silicon in photovoltaics

Lan, C.W.; Lan, Albert; Yang, Chih-Chung; Hsu, Hung-Pin; Yang, Mengsu; Yu, A.; Hsu, B.; Hsu, Wen Dung; Yang, A.

doi:10.1016/j.jcrysgro.2016.10.072

Cited by 67 publications

(23 citation statements)

References 20 publications

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“…The efficiency of photovoltaic cells from monocrystalline silicon is currently between 18-26.3% [26][27][28][29][30] and from polycrystalline cells is between 14-21.7% [31,32]. The lowest efficiency is photovoltaic organic cells 8.7-12.1%, called third generation ones [33,34].…”

Section: Analysis Of Electricity Production From Photovoltaic Panelsmentioning

confidence: 99%

The Photovoltaic Installation Application in the Public Utility Building

Piotrowska-Woroniak

2017

Ecological Chemistry and Engineering S

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Abstract:The article presents the use of photovoltaic installation in a building with office space and a section for kindergarten to support the production of electricity using solar energy. Accepted technological installation solution, capital expenditures to be incurred for the project and payback time are shown. Paper presents the results of the performance simulation of the PV system adopted depending on the angle of photovoltaic panels. Designed photovoltaic installation consists of 62 panels with a total nominal power of 15.5 kW. The use of photovoltaics in the facility allow reducing carbon dioxide emissions into the atmosphere by approximately 52%. In Poland, most of the electricity produced is still based on coal and lignite. Photovoltaics is one of the renewable sources of energy, so-called "Green" energy. The investment could be made thanks to the Regional Operational Programme Podlaski, Activity 5.2 Development of local infrastructure, environmental protection 2007-2013.

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Section: Analysis Of Electricity Production From Photovoltaic Panelsmentioning

confidence: 99%

The Photovoltaic Installation Application in the Public Utility Building

Piotrowska-Woroniak

2017

Ecological Chemistry and Engineering S

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“…the dendritic casting method [9,10], the mono-like solidification (ML-Si) [11][12][13] and the high performance multi-crystalline silicon (HP mc-Si) [14]. Both ML-Si and HP mc-Si techniques, which are used in the industry, produce ingots with a lower dislocation density compared to the conventional mc-Si while allowing the use of low-cost casting solidification methods.…”

Section: Introductionmentioning

confidence: 99%

Strain building and correlation with grain nucleation during silicon growth

et al. 2019

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This work is dedicated to the grain structure formation in silicon ingots with a particular focus on the crystal structure strain building and its implication in new grain nucleation process. The implied mechanisms are investigated by advanced in situ X-ray imaging techniques during silicon directional solidification. It is shown that the grain structure formation is mainly driven by Σ3 <111> twin nucleation. Grain competition phenomena occurring during the growth process lead to the creation of higher order twin boundaries, localised strained areas and associated crystal structure deformation. On the one hand, it is demonstrated that local strain building can be directly related to the characteristics of the twin boundaries created during silicon growth due to grain competition. On the other hand, space restriction due to competition during growth can be at the origin of local strain building as well. Finally, the accumulation of all these factors generating strain is responsible for spontaneous new grain nucleation. When occurring, both grain nucleation and subsequent grain structure reorganisation contribute to lower the strain in the growing ingot.It is demonstrated as well that the local distribution of the strained areas created during silicon growth is retrieved after cooling down, from melting temperature to room temperature, on top of an additional larger scale deformation of the sample due to the cooling down only.

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“…Still much effort is aimed at decreasing the negative effect of structural defects on the device performance . One approach is to control the structure of the final ingot by changing the nucleation phase, such as growing Quasi‐Mono (QM) silicon or High Performance Multicrystalline (HPMC) ingots . Quasi‐mono growth requires a seeding layer consisting of monocrystalline silicon slabs of specific orientation, which are laid out next to each other and melted partially, before the ingot starts to crystallize.…”

Section: Introductionmentioning

confidence: 99%

“…Seeding can also be used to grow HPMC‐Si, e.g., by fluidized bed reactor Si feedstock . This method results in a structure with grains smaller than in standard multicrystalline silicon.…”

Section: Introductionmentioning

confidence: 99%

Recombination Strength of Dislocations in High‐Performance Multicrystalline/Quasi‐Mono Hybrid Wafers During Solar Cell Processing

Adamczyk

Søndenå

You

et al. 2017

Physica Status Solidi (a)

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Wafers from a hybrid silicon ingot seeded in part for High Performance Multicrystalline, in part for a quasi‐mono structure, are studied in terms of the effect of gettering and hydrogenation on their final Internal Quantum Efficiency. The wafers are thermally processed in different groups – gettered and hydrogenated. Afterwards, a low temperature heterojunction with intrinsic thin layer cell process is applied to minimize the impact of temperature. Such procedure made it possible to study the effect of different processing steps on dislocation clusters in the material using the Light Beam Induced Current technique with a high spatial resolution. The dislocation densities are measured using automatic image recognition on polished and etched samples. The dislocation recombination strengths are obtained by a correlation of the IQE with the dislocation density according to the Donolato model. Different clusters are compared after different process steps. The results show that for the middle of the ingot, the gettering step can increase the recombination strength of dislocations by one order of magnitude. A subsequent passivation with layers containing hydrogen can lead to a decrease in the recombination strength to levels lower than in ungettered samples.

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The emergence of high-performance multi-crystalline silicon in photovoltaics

Cited by 67 publications

References 20 publications

The Photovoltaic Installation Application in the Public Utility Building

The Photovoltaic Installation Application in the Public Utility Building

Strain building and correlation with grain nucleation during silicon growth

Recombination Strength of Dislocations in High‐Performance Multicrystalline/Quasi‐Mono Hybrid Wafers During Solar Cell Processing

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