The electronic properties of disordered passive films

Dean, Mary; Stimming, Ulrich

doi:10.1016/0010-938x(89)90030-9

Cited by 149 publications

(50 citation statements)

References 17 publications

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“…4) by assuming Е С -Е Т, 2 = 24 k В Т which posed the deep donor level at around 0.520 eV below the Fermi level which coincides with flat band potential in the electro chemical scale above reported (-0.3 V vs. SSC). As expected, for the low band bending region, the slope remains constant at all frequencies, at variance with the experimental observation, but with increasing potential as soon E F reach the Е Т, 2 level, the effect of frequency is quite strong and rather neglected in older theoretical treatments dealing with disordered passive films [39]. In fact a large difference is appearing now in M-S plots as a function of ac frequency with the lower frequencies (10 and 100 Hz) simulating curves showing a maximum followed by a minimum whilst the plot at 1 kHz displays a monotonic curvilinear behaviour.…”

Section: Simulation and Mott-schottky Analysissupporting

confidence: 86%

A critical assessment of the Mott-Schottky analysis for the characterisation of passive film-electrolyte junctions

et al. 2010

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Abstract-The widespread use of the Mott-Schottky plots to characterize the energetics of passive film/electrolyte junction is critically reviewed in order to point out the limitation of such approach in describ ing the electronic properties of passive film as well in deriving the correct location of the characteristic energy levels of the junction. The frequency dependency of M-S plots frequently observed in the experimental data gathered in a sufficiently large range of frequency is extensively discussed for a relatively thick (160 nm) ther mally aged amorphous niobia (α Nb 2 O 5 ) film immersed in electrolytic solution. The relatively simple equiv alent electrical circuit describing an ideally blocking behaviour of the junction allows a direct comparison of the experimental data analysis based on the use of Mott-Schottky or amorphous semiconductor Schottky barrier interpretative models. Moreover the theoretical simulations of the M-S plots based on the theory of crystalline semiconductor suggest an electronic structure of the investigated passive film containing a distri bution of localized electronic states deep lying in energy in agreement with the model of amorphous semi conductor Schottky barrier.

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Section: Simulation and Mott-schottky Analysissupporting

confidence: 86%

A critical assessment of the Mott-Schottky analysis for the characterisation of passive film-electrolyte junctions

et al. 2010

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“…In this case, the concentration of donors increases with increasing electrode potential as the Fermi level shifts down from conduction band to valence band [36]. Therefore, a number of workers [36][37][38] modeled Mott-Schottky theory by assuming consecutive ionization of donor levels and by utilizing the Euler method [39]. Other scientists [40], however, further pointed out that the semiconductor model is helpful to understand the electronic properties and is applicable for a period of time in which the donor concentration is approximately constant.…”

Section: Photoelectrochemical Performance Of Electrode Smentioning

confidence: 99%

Photoelectrochemical properties of MoO2 thin films

Dukštienė

Sinkevičiūtė

2013

J Solid State Electrochem

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Thin MoO 2 films were electrodeposited on a selenium pre-deposited SnO 2 |glass plate. The photoelectrochemical properties of MoO 2 films were investigated in 0.1 M Na 2 SO 4 solution by the ultraviolet-visible spectrophotometry, linear sweep voltammetry, and altering current impedance measurement techniques. It was found that under illumination with the incident light of λ=366 nm, the photo response of the MoO 2 |SnO 2 |glass electrode resulted from the MoO 2 layer, while the SnO 2 layer served as a sink for photogenerated charge carriers. The MoO 2 film exhibited ntype conductivity. A schematic band structure diagram of MoO 2 in 0.1 M Na 2 SO 4 solution was constructed. The flat band potential (E fb ), the donor concentration (N D ), the photogeneration current efficiency depended on MoO 2 film thickness. The [Fe(CN) 6 ] 4−/3− redox PEC cell with MoO 2 | SnO 2 |glass plate as a photoanode was constructed. Power output characteristics such as the open circuit voltage (V OC ), short circuit current (I SC ), the fill factor (FF), and the lightto-electrical conversion efficiency (η) were determined. The maximum light-to-electrical conversion efficiency exhibited by the PEC cell was 0.94 %.

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“…The estimated values of = 1 + 2 calculated with (9) show that the layers formed on Alloy UB6 are typically on the order of nm in thickness, within the typical range for passive films formed on stainless steel (1-3 nm) [57].…”

Section: Equivalent Circuit and Interpretationmentioning

confidence: 58%

Corrosion Behaviour of a Highly Alloyed Austenitic Alloy UB6 in Contaminated Phosphoric Acid

Boudalia

Guenbour

Bellaouchou

et al. 2013

International Journal of Corrosion

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The influence of temperature ∘ C) on the electrochemical behaviour of passive films anodically formed on UB6 stainless steel in phosphoric acid solution (5.5 M H 3 PO 4 ) has been examined by using potentiodynamic curves, electrochemical impedance spectroscopy, and Mott-Schottky analysis. UB6 stainless steel in contaminated phosphoric acid is characterised by high interfacial impedance, thereby, illustrating its high corrosion resistance. The obtained results show that the films behave as n-type and p-type semiconductors in the potential range above and below the flat band potential, respectively. This behaviour is assumed to be the consequence of the semiconducting properties of the iron oxide and chromium oxide regions which compose the passive film.

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The electronic properties of disordered passive films

Cited by 149 publications

References 17 publications

A critical assessment of the Mott-Schottky analysis for the characterisation of passive film-electrolyte junctions

A critical assessment of the Mott-Schottky analysis for the characterisation of passive film-electrolyte junctions

Photoelectrochemical properties of MoO2 thin films

Corrosion Behaviour of a Highly Alloyed Austenitic Alloy UB6 in Contaminated Phosphoric Acid

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