The electronic energy spectrum of zero-gap semiconductors

Gelmont, Boris; Ivanov-Omskiĭ, V. I.; Tsidilkovskii, I. M.

doi:10.1070/pu1976v019n11abeh005348

Cited by 16 publications

(8 citation statements)

References 4 publications

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“…If impurities which could serve as donors or acceptors are introduced into this intrinsic system, the energy level of impurity-related holes or electrons must lie in a region of the continuous energy spectrum. 21 Naturally in such a system, we expect an extremely low density of states at the Fermi level. Therefore, a small number of donors can be expected to show a strong effect.…”

Section: Discussionmentioning

confidence: 99%

Anomaly close to an electronic topological semimetal-insulator transition in elemental fcc-Yb under pressure

Enderlein

Ramos

Bittencourt

et al. 2013

Journal of Applied Physics

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The Lifshitz-type semimetal-insulator transition, which is a transition of the electronic topology, has been considered as the most fundamental metal-insulator transition. Here, we present resistivity measurements under pressure in the vicinity of the quantum critical point of fcc Yb. We apply a previously suggested scaling for this type of transition and identify its universality class. Moreover, we observe an anomaly in the screening coefficient A of the T 2 term in the resistivity at low temperatures in the metallic phase. We suggest an interpretation of this phenomenon as an effect of doping by Ca impurities unintentionally present in the Yb crystals. The observed behavior may very well be applicable to any doped system in the vicinity of such a transition. V

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Section: Discussionmentioning

confidence: 99%

Anomaly close to an electronic topological semimetal-insulator transition in elemental fcc-Yb under pressure

Enderlein

Ramos

Bittencourt

et al. 2013

Journal of Applied Physics

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“…However, for short pulse operation where heat dissipation can occur in the diode, CdTe could be used. The problem of carrier ionization is also far more severe in CdTe than in GaAs [31,32]. Whether this reflects the less advanced technology of CdTe or is an intrinsic material property cannot be said at this time.…”

Section: Gunn Effectmentioning

confidence: 99%

Applications of CdTe. A review

Wald¹

1977

Rev. Phys. Appl. (Paris)

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The review considers the history of CdTe in short form and delineates the applications potential for the compound. This potential is seen to arise on the one hand from a combination of various physical properties which is useful for several classes of electronic and particularly optoelectronic devices, and on the other hand from the fact that thin film fabrication and low cost starting materials could give it significant cost advantages over other semiconductors. The obvious lack of widespread application is traced to three fundamental problems : 1) Lack of control over minority carrier behavior ; 2) Erratic and non reproducible performance of thin films ; 3) Lack of good contacts to low resistivity p-type material. Some suggestions on further work in these areas are also advanced

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“…Several three-dimensional (3D) solids are known to present quadratic band touchings at the Fermi energy or in its neighbourhood. Grey tin (α-Sn) and mercury telluride (HgTe) were the first materials in which a crossing between parabolic valence and conduction bands was recognized and their rich phenomenology has attracted extensive theoretical and experimental interest for decades [1][2][3][4] .…”

Section: Introductionmentioning

confidence: 99%

Dielectric function and plasmons of doped three-dimensional Luttinger semimetals

Mauri

Polini

2019

Phys. Rev. B

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Luttinger semimetals are three-dimensional electron systems with a parabolic band touching and an effective total spin J = 3/2. In this paper, we present an analytical theory of dielectric screening of inversion-symmetric Luttinger semimetals with an arbitrary carrier density and conduction-valence effective mass asymmetry. Assuming a spherical approximation for the single-particle Luttinger Hamiltonian, we determine analytically the dielectric screening function in the random phase approximation for arbitrary values of the wave vector and frequency, the latter in the complex plane. We use this analytical expression to calculate the dispersion relation and Landau damping of the collective modes in the charge sector (i.e., plasmons).

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The electronic energy spectrum of zero-gap semiconductors

Cited by 16 publications

References 4 publications

Anomaly close to an electronic topological semimetal-insulator transition in elemental fcc-Yb under pressure

Anomaly close to an electronic topological semimetal-insulator transition in elemental fcc-Yb under pressure

Applications of CdTe. A review

Dielectric function and plasmons of doped three-dimensional Luttinger semimetals

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