1977
DOI: 10.1088/0022-3727/10/5/017
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The electroluminescence of gamma-irradiated polyethylene at 77K

Abstract: Following gamma -irradiation at 77K, the isothermal luminescence (ITL) exhibited by polyethylene film has been enhanced by the application of an electric field. The effect is not permanent but is correlated with the magnitude of the ITL signal. It has been attributed to the field-assisted thermal detrapping of trapped electrons and subsequent recombination. A simple one-dimensional model accounts for many features of the experimental results, but breaks down when the time dependence of the electroluminescence … Show more

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Cited by 10 publications
(3 citation statements)
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“…Light is generated subsequent to their recombination. It is shown that the isothermal luminescence can be enhanced on application of an electric field [96,97]. This process, sometimes also referred as 'electroluminescence' [96], is due to the field-assisted detrapping of trapped electrons and must not be confused with the current meaning of EL used in this paper.…”
Section: Polyolefinsmentioning
confidence: 89%
“…Light is generated subsequent to their recombination. It is shown that the isothermal luminescence can be enhanced on application of an electric field [96,97]. This process, sometimes also referred as 'electroluminescence' [96], is due to the field-assisted detrapping of trapped electrons and must not be confused with the current meaning of EL used in this paper.…”
Section: Polyolefinsmentioning
confidence: 89%
“…It means the barrier height of the traps is reduced with increasing voltage because the activation energy usually is taken as the potential of barrier height. In addition, the conductance of SiNC film at high voltage region exhibits exponential dependence on V 1/2 and T −1 , which shows Poole-Frenkel type dependence, [12][13][14][15] as shown in Figs. 2 and 4.…”
Section: Resultsmentioning
confidence: 99%
“…Thus, transport mechanism at high voltage region is dominated by the filed enhanced thermal detrapping mechanism. [12][13][14][15] When voltage is applied on the device, holes are injected into SiNC film through p-Si substrate. At low voltage part, a large number of carriers are trapped in such kind of relatively deeper traps, providing a precondition for the detrapping process.…”
Section: Resultsmentioning
confidence: 99%