The electrode properties of polycrystalline SnO2 containing up to 10% Sb or Ru oxides

A study of degradation of indium tin oxide thin films on glass for display applications

“…Simultaneously, the presence of a trace amount of Cl may dissolve in the moisture to form HCl, which would react with In 2 O 3 , H-Cl and In-O bonds would be broken, and In-Cl and O-H bonds would form as a result [15,[17][18]. The presence of and In 3+ and In + shown in Fig.…”

Sol–gel preparation and characterisation of mixed metal tin oxide thin films

“…Additionally it can also be prepared to contain donor atoms such as Cl or Sb, which raises its n-type carrier capacity to values in excess of 10 20 cm − 3 and consequently the potential conductivity to well above 10 ohm − 1 cm − 1 . The electrodes retain their semiconducting properties and the exchange currents are low [3]. The microstructure of tin oxide, which can be controlled by deposition parameters, also greatly affects its electrical properties.…”

Effect of porous silicon layer on the performance of Si/oxide photovoltaic and photoelectrochemical cells

“…Doping of the oxide film by Ru atoms up to 1% did not affect its optical properties. The optical parameters, film thickness and direct band gap energy were obtained from the transmittance data [11,17,22]. The transmittance measurements of pure and Ru-doped SnO 2 films are presented in Fig.…”

“…In our lab we are trying to combine the improvement made to the photovoltaic and photoelectrochemical solar cells based on n-Si single crystals [9][10][11][12][13][14][15][16][17][18][19][20][21][22] with the expected increase of the short circuit current by the presence of porous Si layer on the top of the Si wafer. The increase of the short circuit current will lead to higher solar conversion efficiencies.…”