The Electrochemistry of Semiconductors

Holmes, P.J.; Handler, Paul

doi:10.1149/1.2425522

Cited by 60 publications

(31 citation statements)

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“…To obtain pore growth on semiconductors only a localized attack of the surface should take place. A localized attack is achieved especially in the case of an avalanche breakdown due to the lowering of the activation energy in defect sites [40,41]. In the case of p-type InP h + are majority carriers and accumulate under anodic conditions on the surface.…”

Section: Resultsmentioning

confidence: 99%

Pore formation on p‐type InP(100)

Schlierf

Lockwood

Graham

et al. 2005

Physica Status Solidi (a)

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PACS 81.05. Ea, 82.45.Vp The present work deals with anodization processes of p-type InP(100) in different halogenic acids. The morphology of the attack depends strongly on the electrochemical conditions and the type of anion present in the electrolyte. Only electropolishing was observed in HCl while the formation of a porous oxide layer was obtained in HF. In HBr, however, pore growth into the bulk material can be achieved.

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Section: Resultsmentioning

confidence: 99%

Pore formation on p‐type InP(100)

Schlierf

Lockwood

Graham

et al. 2005

Physica Status Solidi (a)

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“…In general have defect sites a higher energy level (higher reactivity) than intact crystals. This can be attributed to two factors: The effective energy of electrons is the sum of the stored energy of the defect and the energy of the electric field [45,46]. On the other hand, damaged semiconductor surfaces can be ascribed in terms of additional states in the semiconductor's band gap.…”

Section: Resultsmentioning

confidence: 99%

Electrochemical structuring of mechanically activated n‐InP(100) surfaces

Hueppe

Schlierf

Gassiloud

et al. 2005

phys. stat. sol. (c)

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Localized pore formation on n-InP(100) surfaces under anodic polarization in 1M HCl were created and controlled by a two steps approach. First, scratches in the nanometer scale have been applied mechanically, using a Nano-Indenter. These scratches represent activated sites for pore growth due to their lowered electrochemical pore formation potential (U bd,activated ), which is significantly cathodic to the formation potential on intact surfaces U bd (U bd,intact ). Thus, a potential window can be defined between U bd,activated and U bd,intact , where anodic polarization in 1M HCl leads to selective pore formation follows, at a potential that is inside those window. Characterization by scanning electron microscopy shows that pore formation occurs only at the activated sites. Furthermore, both broadening and morphology of the pores depend strongly on the force load during the scratching process. Analysis of the scratched surface has been carried out before and after etching, using atomic force microscopy (AFM). The results clearly show that the porous region is significantly wider than the originally scratched region -this can be ascribed to dislocation formation in the vicinity of the scratch.

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“…[1][2][3][4] A variety of structures, e.g. triangular and rectangular grooves, pyramids, membranes and microholes, have been made, which have found a large applications in devices.…”

Section: Introductionmentioning

confidence: 99%

Texture etching of monocrystalline silicon surface with sodium hypochlorite

Lounas¹,

Bouda²,

Menari³

et al. 2014

Surface Engineering

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Silicon etching in alkaline solutions has been employed for many years, in the fabrication of solar cells. Surface texturisation of crystalline silicon was performed by using different etching solutions. Recently, a strong oxidising reagent NaOCl has been used successfully by several authors to texture the silicon surface. In this work, the effect of the etching parameters such as solution composition on the silicon surface morphology is studied. The surface of etched samples was analysed by scanning electron microscopy (SEM), spectrophotometry and secondary ion mass spectroscopy (SIMS). The results clearly show that the presence of ethanol in the solution leads to the formation of pyramids, while its absence induces the formation of nanostructures (nanowire or nanoneedle).

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The Electrochemistry of Semiconductors

Cited by 60 publications

References 0 publications

Pore formation on p‐type InP(100)

Pore formation on p‐type InP(100)

Electrochemical structuring of mechanically activated n‐InP(100) surfaces

Texture etching of monocrystalline silicon surface with sodium hypochlorite

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