The electrical resistivity of TiZrNi quasicrystals in the interval 1.3–300 K

Azhazha, V.M.; Khadzhay, G. Ya.; Malikhin, S; Merisov, B. A.; Pugachov, A T

doi:10.1016/j.physleta.2003.10.065

Cited by 13 publications

(10 citation statements)

References 13 publications

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“…The temperature coefficient a of the conductivity is positive for the films whatever T s is. This result is consistent with the s-a Mooij correlation [13] observed in low-conductivity metallic alloys and with previous results obtained by Zavaliche et al [5] on rapidly quenched Ti-Ni-Zr ribbons, but is in disagreement with the recent study of Azhazha et al [6] where a was found negative. We also observed a negative temperature coefficient a for the target but we believe that it is correlated to the low target quality containing crystalline phases.…”

Section: Resultssupporting

confidence: 91%

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Transport properties of Ti-Ni-Zr films grown by pulsed laser deposition

Boffoue

Lenoir

Jacquot

et al. 2004

Solid State Communications

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Quasicrystalline Ti 41.5 Ni 17 Zr 41.5 thin films have been synthesized at different temperatures by pulsed laser deposition (PLD) from a Nd:YAG laser. Electrical resistivity, Hall coefficient, magnetoresistance and thermopower measurements have been conducted in the 4.4-300 K or 70-300 K temperature range. Ti 41.5 Ni 17 Zr 41.5 quasicrystals are characterized by a high electrical conductivity, an order of magnitude higher than in other quasicrystals, independent of their morphology and microstructure.Hall measurements indicate that the films have a high carrier concentration. Thermoelectric powers in Ti 41.5 Ni 17 Zr 41.5 have relatively small magnitudes and the values have been found to depend on the microstructure. q

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Section: Resultssupporting

confidence: 91%

“…Long-range quasi-periodicity, local atomic environment, or combined effects have been given as the possible origin of these particular features. Most of the experimental and theoretical works concerning transport properties has been conducted with Al-based materials, while Ti-based materials have not received much attention yet [5,6].…”

Section: Introductionmentioning

confidence: 99%

Transport properties of Ti-Ni-Zr films grown by pulsed laser deposition

Boffoue

Lenoir

Jacquot

et al. 2004

Solid State Communications

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“…It should be noted the metallic systems with pseudogap can have a temperature dependence of the resistance which is described by the Bloch-Grüneisen expression, see e.g., Refs. 34,35 . The pseudogap value primarily depends on the material composition 26 , while its temperature dependence is weak and it is chiefly associated with the thermal expansion.…”

Section: A Normal Resistance and Excess Conductivitymentioning

confidence: 99%

Influence of annealing on the electrical resistance of YBCO single crystals

Вовк

Khadzhai

Nazyrov

et al. 2018

J Mater Sci: Mater Electron

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The effect of annealing on the basal-plane electrical resistivity of the YBa2Cu3O 7−δ single crystals is studied in a broad range of oxygen contents. Within the framework of s-d scattering of electrons by phonons, an increase in the oxygen deficit index, δ, leads to a significant increase in the Debye temperature, θ, which is associated with the isotropization of the phonon spectrum as the concentration of oxygen vacancies increases. Near the optimal doping, the role of the paraconductivity becomes crucial, whereas its contribution decreases with increasing δ. At large values of δ some deviations from the s-d model of electron scattering by phonons are observed at room temperature, while no paraproductivity is observed. In the superconducting transition region, a 2D-3D crossover is observed, which shifts in the direction of Tc with increasing δ. The estimate for the transverse coherence length is about 1Å.

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“…1 In Ref. 5 we reported a low-temperature (TϷ20 K) minimum in the temperature dependence of the resistivity of icosahedral quasicrystalline and superconducting alloys of the Ti-Zr-Ni family. In the present work we report an investigation of the electrical conductivity of alloys of the system Ti-Zr-Ni in a broad temperature range, including a study of the superconducting transition in magnetic fields.…”

Section: Introductionmentioning

confidence: 99%

Electrical resistivity of Ti41.5Zr41.5Ni17 quasicrystals in the temperature region 0.3–300 K

Azhazha

Khadzhay

Merisov

et al. 2005

Low Temperature Physics

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The electrical resistivity of icosahedral quasicrystals Ti 41.5 Zr 41.5 Ni 17 is investigated in the temperature region between 0.3 and 300 K on samples of different quality. At temperatures between 0.3 and 2 K the influence of external magnetic fields up to 16 kOe on the superconducting transition of these materials is investigated. The temperature dependence of the resistivity in the region of the superconducting transition varies in a step-like manner. The data of the x-ray analysis imply the presence of several different quasicrystalline phases. Above the superconducting transition a resistivity minimum is observed.

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The electrical resistivity of TiZrNi quasicrystals in the interval 1.3–300 K

Cited by 13 publications

References 13 publications

Transport properties of Ti-Ni-Zr films grown by pulsed laser deposition

Transport properties of Ti-Ni-Zr films grown by pulsed laser deposition

Influence of annealing on the electrical resistance of YBCO single crystals

Electrical resistivity of Ti41.5Zr41.5Ni17 quasicrystals in the temperature region 0.3–300 K

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