The electrical resistivity of boron nitride over the temperature range 700 degrees C to 1400 degrees C

Carpenter, L. G.; Kirby, P J

doi:10.1088/0022-3727/15/7/009

Cited by 30 publications

(18 citation statements)

References 6 publications

(6 reference statements)

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“…Initial, contact, and boundary conditions are coincident with what described in the geometry optimization section, with the only addition of a contact boundary condition aimed at reproducing the effect of the hBN coating. The boron nitride properties needed to describe the behavior of such coating were derived through numerical regression from experimental data and are here reported.

{italicρ}_{t h} = 2280 [\frac{k g}{m^{3}}]

σ = 1.53 \times 10^{15} - 7.29 \times 10^{12} T + 1.42 \times 10^{10} T^{2} - 1.42 \times 10^{7} T^{3} + 7.69 \times 10^{3} T^{4} - 2.15 T^{5} + 2.43 \times 10^{- 4} T^{6} false[normalΩ \cdot cm false]

C_{normalp} = - 362.41 + 4.21 T - 0.01 T^{2} + 1.69 \times 10^{- 6} T^{3} - 3.25 \times 10^{- 10} T^{4} + 1.89 \times 10^{- 14} T^{5} [\frac{J}{kg \cdot normalK}]

k_{normalT} = 80 [\frac{W}{normalm \cdot normalK}]

ε = 0.85

…”

Section: Sps Composite Materials Tooling: Boron Nitride Coatingmentioning

confidence: 99%

Section: Sps Composite Materials Tooling: Boron Nitride Coatingmentioning

confidence: 99%

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Advancement of Tooling for Spark Plasma Sintering

et al. 2015

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A combined experimental and numerical study is conducted to investigate temperature nonhomogeneities within a Spark Plasma Sintering tooling setup. Radial thermal gradients through a powder compact are encountered, a cause of microstructural nonuniformities in sintered specimens, which tend to become more significant when increasing the setup's characteristic size. In the insulating silicon nitride powder compact employed for the experimental procedures, a double pyrometer arrangement detects a strong temperature disparity between the overheated die and the area adjacent to the tooling's axis. A previous finite‐element simulations campaign had individuated a possible solution in a novel punch design, consisting in the drilling of three concentric ring‐shaped holes according to a specific geometrical pattern, whose efficacy is here experimentally verified. Further punch optimization strategies are drawn, involving a refinement of the three‐rings geometry by linearly varying the drilled holes characteristic dimensions along the radial direction, or the selective coating and consequent insulation of the punch cross section with a thin layer of hexagonal boron nitride. Ideal configurations are identified, consisting in a concentration of the graphite punch's mass at its center by means of a tailored holes pattern, or in the coating of a portion of the conventionally shaped punch with boron nitride.

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{italicρ}_{t h} = 2280 [\frac{k g}{m^{3}}]

σ = 1.53 \times 10^{15} - 7.29 \times 10^{12} T + 1.42 \times 10^{10} T^{2} - 1.42 \times 10^{7} T^{3} + 7.69 \times 10^{3} T^{4} - 2.15 T^{5} + 2.43 \times 10^{- 4} T^{6} false[normalΩ \cdot cm false]

C_{normalp} = - 362.41 + 4.21 T - 0.01 T^{2} + 1.69 \times 10^{- 6} T^{3} - 3.25 \times 10^{- 10} T^{4} + 1.89 \times 10^{- 14} T^{5} [\frac{J}{kg \cdot normalK}]

k_{normalT} = 80 [\frac{W}{normalm \cdot normalK}]

ε = 0.85

…”

Section: Sps Composite Materials Tooling: Boron Nitride Coatingmentioning

confidence: 99%

Section: Sps Composite Materials Tooling: Boron Nitride Coatingmentioning

confidence: 99%

Advancement of Tooling for Spark Plasma Sintering

et al. 2015

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“…Among the polymorphs of BN, hBN 2 is not a new material, but one of the best-known high-heat-resistant materials owing to its high thermal and chemical stability. 1 However, its band-gap properties, including the band-gap energy, were left unclear, even though the band structure of the material had been studied experimentally [3][4][5][6][7][8][9][10][11][12][13][14][15][16] and theoretically. [17][18][19][20][21][22][23] The properties of both direct and indirect properties of the band gaps were reported with the band-gap energies ranging from 3.6 to 7.1 eV.…”

Section: Introductionmentioning

confidence: 99%

Hexagonal Boron Nitride as a New Ultraviolet Luminescent Material and Its Application

Watanabe

Taniguchi

2011

International Journal of Applied Ceramic Technology

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Hexagonal boron nitride (hBN), which is conventionally used as one of the best‐known heat‐resistant materials due to its high thermal and chemical stability, has recently been found as a highly luminous material in the far‐ultraviolet (FUV) region. This paper reviews the recent studies of hBN growth, optical properties, and device application development. In the case of highly pure crystals of hBN grown by the solvent growth method, the electronic excitation states near the band gap are governed by optically allowed exciton effects, which originate from the Jahn–Teller effect on the exciton series. The excitonic luminescence bands are utilized for an FUV plane light‐emitting device excited by field emitters to take advantage of the highly luminous character.

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“…BN has not only excellent chemical stability but also a high electrical resistance. [15][16] These properties are extraordinarily important for device retention in PCM, the sensing margin, and the device speed. As the amount of BN increased in the GST films, the crystalline temperature (T c ) increased.…”

Section: Introductionmentioning

confidence: 99%

Ultrafast phase change and long durability of BN-incorporated GeSbTe

et al. 2015

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BN-incorporated amorphous Ge 2 Sb 2 Te 5 (GST) films were deposited by an ion beam sputtering deposition (IBSD) method using GST and BN targets. Based on in situ sheet resistance measurements, we confirmed that as the amount of BN increased, the crystallization temperature (T c ) increased from 150 o C to 260 o C. It was demonstrated that the phase change speed of BN-incorporated GST is ten times faster than that of GST using a nanosecond laser.By evaluating Johnson-Mehl-Avrami (JMA) plots and scanning electron microscope (SEM) images, it was confirmed that the one-dimensional grain growth is dominant during the fast phase change of BN-incorporated GST because BN impurities can act like nuclei during the initial stage of crystal growth. After the 100 iteration test under rigorous acceleration conditions of SET/RESET switching using the pulsed laser system, it was confirmed that the void formation and thickness variation are very limited in the BN-incorporated GST, as compared to GST. This result originates from the low phase change stress of the BN-incorporated GST films during one-dimensional growth. The electrical SET speed and cyclability of the BNincorporated GST device also improved significantly compared to GST.

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The electrical resistivity of boron nitride over the temperature range 700 degrees C to 1400 degrees C

Cited by 30 publications

References 6 publications

Advancement of Tooling for Spark Plasma Sintering

Advancement of Tooling for Spark Plasma Sintering

Hexagonal Boron Nitride as a New Ultraviolet Luminescent Material and Its Application

Ultrafast phase change and long durability of BN-incorporated GeSbTe

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