The electrical properties of zinc in silicon

Weiss, Sharon M.; Beckmann, R.; Kassing, Rainer

doi:10.1007/bf00343410

Cited by 38 publications

(30 citation statements)

References 17 publications

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“…The two Zn levels of equal abundance shown in figure 1 and [3,8,9]. The present ionization enthalpies are within the range spanned by previously reported values.…”

Section: Discussionsupporting

confidence: 87%

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Point defects in silicon after zinc diffusion - a deep level transient spectroscopy and spreading-resistance profiling study

Masuhr

Bracht

Stolwijk

et al. 1999

Semicond. Sci. Technol.

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Abstract. We present results from spreading-resistance profiling and deep level transient spectroscopy on Si after Zn diffusion at 1294 K. Concentration profiles of substitutional Zn s in dislocation-free and highly dislocated Si are described by a diffusion mechanism involving interstitial-substitutional exchange. Additional annealing at 873 K following quenching from the diffusion temperature is required in the case of dislocation-free Si to electrically activate Zn s . The formation of complexes of Zn s with unwanted impurities upon quenching is discussed. Additional Ni diffusion experiments as well as total energy calculations suggest that Ni is a likely candidate for the passivation of Zn s . From total energy calculations we find that the formation of complexes involving Zn and Ni depends on the position of the Fermi level. This explains differences in results from spreading-resistance profiling and deep level transient spectroscopy on near-intrinsic and p-type Si, respectively.

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“…The two Zn levels of equal abundance shown in figure 1 and [3,8,9]. The present ionization enthalpies are within the range spanned by previously reported values.…”

Section: Discussionsupporting

confidence: 87%

“…The spectra are plotted in units of 10 −15 F (fF). The two main peaks at 140 K and 310 K are in good agreement with the double acceptor behaviour of Zn s in Si [8,9] and will be referred to as Zn 0/− s and Zn −/2− s . In particular, the corresponding defect state concentrations are found to be mutually equal within 20%.…”

Section: Resultssupporting

confidence: 56%

Point defects in silicon after zinc diffusion - a deep level transient spectroscopy and spreading-resistance profiling study

Masuhr

Bracht

Stolwijk

et al. 1999

Semicond. Sci. Technol.

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“…The electrical levels of various copper related defects are known from experiment. [2][3][4][5][6][7] Analysis and interpretation of the observations is assisted by the fact that related impurities and their complexes with hydrogen such as zinc, 8 silver, 9 gold, 10,11 platinum, 12 and palladium 13 have defect induced levels of similar character. According to Watkins, the electrical levels of substitutional transition metals are derived from those of the silicon monovacancy V Si ͑Ref.…”

Section: Introductionmentioning

confidence: 99%

Passivation of copper in silicon by hydrogen

et al. 2005

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The structures and energies of model defects consisting of copper and hydrogen in silicon are calculated using the AIMPRO local-spin-density functional method. For isolated copper atoms, the lowest energy location is at the interstitial site with T d symmetry. Substitutional copper atoms are found to adopt a configuration with D 2d symmetry. We conclude that the symmetry is lowered from T d due to the Jahn-Teller effect. Interstitial hydrogen atoms are found to bind strongly to substitutional copper atoms with an energy that is more than the difference in formation energy over the interstitial site for Cu. The resulting complex has C 2v symmetry in the −2 charge state where the H atom is situated about 1.54 Å away from the Cu atom in a ͓100͔ direction. In other charge states the symmetry of the defect is lowered to C s or C 1 . A second hydrogen atom can bind to this complex with nearly the same energy as the first. Two structures are found for copper dihydride complexes that have nearly equal energies; one with C 2 symmetry, and the other with C s symmetry. The binding energy for a third hydrogen atom is slightly more than for the first. Calculated electronic levels for the model defects relative to one another are found to be in fair to good agreement with experimental data, except for the copper-dihydride complex. The copper trihydride complex has no deep levels in the bandgap, according to our calculations.

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“…In Si t he situation is even more comp licated by the tendency of the corresponding elements to associate with other defects or to reside on interstitial sites [5 ,6, 7J . Recent Hall and DLTSmeasurements [8,5] have confirmed older work in that Zn may prevail as a substitutional double acceptor in Si under appropriate conditions. From IR-absorption due to transitions between ground and excited states [9,1OJ it was concluded in addition that the double acceptor ground state is a multiplet of at least three states with separations in the meV range and additional splittings under uni axial stress.…”

Section: Introductionmentioning

confidence: 63%