The electrical properties of polycrystalline silicon films

Seto, John Y. W.

doi:10.1063/1.321593

Cited by 2,761 publications

(1,339 citation statements)

References 13 publications

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“…In the "trapping model" for grain boundaries in polycrystalline materials [24][25][26][27], which our calculations in Sec. IV are based upon, the density Q(x) is given by…”

Section: Current-voltage Characteristic a Classical Current-volmentioning

confidence: 99%

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Generalized Drude model: unification of ballistic and diffusive electron transport

Lipperheide

Weis

Wille

2001

J. Phys.: Condens. Matter

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For electron transport in parallel-plane semiconducting structures, a model is developed that unifies ballistic and diffusive transport and thus generalizes the Drude model. The unified model is valid for arbitrary magnitude of the mean free path and arbitrary shape of the conduction band edge profile. Universal formulas are obtained for the current-voltage characteristic in the nondegenerate case and for the zero-bias conductance in the degenerate case, which describe in a transparent manner the interplay of ballistic and diffusive transport. The semiclassical approach is adopted, but quantum corrections allowing for tunneling are included. Examples are considered, in particular the case of chains of grains in polycrystalline or microcrystalline semiconductors with grain size comparable to, or smaller than, the mean free path. Substantial deviations of the results of the unified model from those of the ballistic thermionic-emission model and of the drift-diffusion model are found. The formulation of the model is one-dimensional, but it is argued that its results should not differ substantially from those of a fully three-dimensional treatment. PACS number(s): 05.60.Cd,

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“…In the "trapping model" for grain boundaries in polycrystalline materials [24][25][26][27], which our calculations in Sec. IV are based upon, the density Q(x) is given by…”

Section: Current-voltage Characteristic a Classical Current-volmentioning

confidence: 99%

“…When the bias vanishes, the electron density n(x) has the equilibrium form given by expression (25) with E F (x) = const. = E F (0), and we obtain a nonlinear differential equation for E c (x).…”

Section: Current-voltage Characteristic a Classical Current-volmentioning

confidence: 99%

Generalized Drude model: unification of ballistic and diffusive electron transport

Lipperheide

Weis

Wille

2001

J. Phys.: Condens. Matter

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“…As a theoretical model for the conductivity of polysilicon, a-carrier trapping model was first qualitatively proposed by Kamins [ 311, and was quantitatively evaluated by Seto [32]. In this model the grain boundary, which is only a few atomic layers thick, contains trapping states caused by defects resulting from disordered or incomplete atomic bonding.…”

Section: Deposition Processmentioning

confidence: 99%

In situ phosphorus-doped polysilicon for excitation and detection in micromechanical resonators

Bouwstra

Weerd

Elwenspoek

1990

Sensors and Actuators A: Physical

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Low-pressure chemical vapour deposited (LPCVD) in situ phosphorus-Dodd polysilicon films have been grown from a 60:30:300 seem silane:phosphine (2000 ppm):nitrogen mass-flow mixture at 625 "C under varied process conditions. Thickness uniformity, grain size, dopant concentration, resistivity, temperature coefficient of resistivity, longitudinal strain gauge factor and the temperature coefficient of the gauge factor are determined. A growth rate with a non-uniformity (30) of 5% is obtained, yielding films with a grain size of 20-30 nm and a surface roughness of 12 nm (peak-to-valley heights), both before and after annealing, and a dopant concentration of (2-3) x lpcrn3.Resistivities of the order of 1 II-&~ cm can be obtained with a temperature coefficient close to zero after annealing at 900 "C for 30 min, with a longitudinal gauge factor of -20 and a temperature coefficient of the gauge factor of -0.25%/"C. A mechanism incorporating the diffusion of dislocations during annealing is proposed to explain the observed effect. The films are appropriate for application as resistors for thermal excitation and piezoresistive detection in resonating micromechanical devices, Resonating micromechanical structures consist of an element for the excitation and an element for the detection of the vibration of the structure. These elements can be an integral part of the structure, see Fig. 1, with an excitation element for .exerting a bending moment, and a detection element to detect bending strain. One technique makes use of resistive heating for thermal excitation and resistive strain gauges for detection. For our resonating membrane mass-flow sensor [ 191 as well as for our resonating microbridge mass-flow sensor [20], we make use of in situ phosphorus doping of low-pressure chemical vapour deposited (LPCVD) polysilicon for the excitation and the detection resistors, together with a single-crystal silicon substrate. We will first discuss the advantages of polysilicon for this application, and then we will give reasons for our choice of in situ doping with phosphorus.

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“…This discrepancy is often attributed to defects such as grain boundaries and intra-grain dislocations [7]. Thus it is important to do research on how these defects are formed during the growth process and 3 therefore reduce them.…”

Section: Introductionmentioning

confidence: 99%

The energetic impact of small Cd Te clusters on Cadmium Telluride

2015

Thin Solid Films

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Cadmium Telluride (CdTe) is an excellent material for low-cost, high efficiency thin film solar cells. It is important to do research on how these defects are formed during the growth process, since defects lower the efficiency of solar cells. In this work we use computer simulation to predict the growth of a sputter deposited CdTe thin film. Single deposition tests have been performed, to study the behaviour of deposited clusters under different conditions. We deposit a Cd x Te y (x, y = 0, 1) cluster onto the (100) and (111) Cd and Te terminated surfaces with energies ranging from 1 to 40 eV.More than 1,000 simulations have been performed for each of these cases so as to sample the possible deposition positions and to collect sufficient statistics.The results show that Cd atoms are more readily sputtered from the surface than Te atoms and the sticking probability is higher on Te terminated surfaces than Cd terminated surfaces. They also show that increasing the deposition energy typically leads to an increase in the number of atoms sputtered from * M.Yu2@lboro.ac.uk † S.D. Kenny@lboro.ac.uk

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The electrical properties of polycrystalline silicon films

Cited by 2,761 publications

References 13 publications

Generalized Drude model: unification of ballistic and diffusive electron transport

Generalized Drude model: unification of ballistic and diffusive electron transport

In situ phosphorus-doped polysilicon for excitation and detection in micromechanical resonators

The energetic impact of small Cd Te clusters on Cadmium Telluride

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