The electrical characteristic of an MIS structure with biocompatible minerals doped (Brushite+Monetite: PVC) interface layer

Ulusoy, Murat; Altındal, Ş.; Azizian‐Kalandaragh, Yashar; Özçelik, Süleyman; Mirzaei-Kalar, Zeinab

doi:10.1016/j.mee.2022.111768

Cited by 22 publications

(3 citation statements)

References 42 publications

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“…The capacitance values in the high positive voltages can be considered almost independent of voltage in the ideal case. Their values also exhibit a curve behaviour almost independent of the frequency in the weak accumulation/inversion regions [41]. However, because of the surface states and accumulated charges, capacitance values can easily change depending on the frequency in the depletion region.…”

Section: Resultsmentioning

confidence: 98%

Negative Capacitance Phenomenon in GaAs-Based MIS Devices Under Ionizing Radiation

Kaymaz

2023

Balkan Journal of Electrical and Computer Engineering

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This study focuses on the abnormal peaks observed in voltage-dependent capacitance graphs and negative capacitance behaviors of the GaAs-based MOS devices for the unirradiated sample and after exposing the device to 5 and 10 kGy ionizing (gamma) radiation doses. Experimental results showed that the amplitude of the abnormal peaks, observed at about 1.75 V, increases with the irradiation dose. The peak point was also shifted toward the positive biases after irradiation. Furthermore, the conductance values increased rapidly and reached their maximum level, while the capacitance values reached their minimum level in the high voltage biases. This situation is directly related to the inductive behavior of the MOS devices. However, it has been determined that the MOS device's inductive behavior is more effective after irradiation. These behaviors can be observed because of the ionization process, the MOS device's series resistance, surface states, and due to some displacement damages caused by ionizing radiation. Therefore, the series resistance and the radiation-induced surface states were obtained to clarify the impact of radiation on the device. It was seen that the radiation-induced surface states changed around 3x1012 for the maximum cumulative dose (10 kGy), and the series resistance values changed less than 2 Ω (it was obtained 8.74 Ω for 0 kGy and 6.82 Ω for 10 kGy). As a result, the degradation in the GaAs-based MOS device was determined to be insignificant for 10 kGy doses. Therefore, this MOS device can be safely used as an electronic component in radiation environments such as nuclear plants and satellite systems.

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Section: Resultsmentioning

confidence: 98%

Negative Capacitance Phenomenon in GaAs-Based MIS Devices Under Ionizing Radiation

Kaymaz

2023

Balkan Journal of Electrical and Computer Engineering

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“…[6][7][8]. The use of such organic materials has increased due to their low cost, reduced leakage current, passivation of unsaturated bonds on the semiconductor surface, light weight, flexibility, easy production, synthesis of compounds with diverse properties for different uses and wide applicability [9][10][11][12][13][14].…”

Section: Introductionmentioning

confidence: 99%

The effects of illumination on the current conduction mechanisms of the Au/C₂₀H₁₂/n-Si Schottky barrier diode (SBD)

Bengi

2023

Phys. Scr.

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Using the I-V characteristics both in the dark and under varied illumination-intensities (50–250 mW.cm−2) by 50 mW.cm−2 steps in the wide range bias-voltage (±5 V), specific fundamental electrical and photo effects parameters of the Au/C20H12/n-Si SBD were examined. Due to the creation of electron–hole pairs and their drift in opposite directions under the influence of an electric field, the value of photocurrent in the reverse bias (Iph) increases when illumination density is increased. The barrier height (ΦB0) tended to decrease due to the increase in photocurrent, while the diode’s ideality factor (n) increased with increasing illumination intensity. Also, the Schottky structure’s open-circuit voltage (Voc), short circuit current (Isc), filling factor (FF), and efficiency (η) were determined to be 0.358 V, 95.5 μA, 33%, and 0.028% under 50 mW.cm−2, respectively. The Rs and Rsh values found using Ohm’s law are a vital function of illumination and voltage which decrease with increasing illumination intensity. Additionally, using the forward bias I-V data and accounting for the bias dependent of the effective barrier height (Φe) and ideality factor n(V) for different illumination intensities, the energy density distribution profile of surface states (Nss) was obtained. According to these results, the organic interlayer consisting of C20H12 is light-sensitive and suitable for optoelectronic devices such as photodetectors and photodiodes.

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“…Despite the multiplicity of the used chemicals in batteries, many recent studies have focused on cobalt oxide Co 3 O 4 , as its qualities such as high electrical capacity and low cost lead to ideal performance in many applications [ 5 ]. Interest has increased when it is used in high-performance lithium/sodium-ion batteries due to their improved safety, high volumetric energy density, and superior storage capacity [ 6 ]. In addition to its ability to improve the electrochemical properties when it is used as a cathode material for lithium-ion batteries [ 7 ].…”

Section: Introductionmentioning

confidence: 99%

Study of electrical properties of cobalt oxide-doped sodium meta vanadate at different frequencies

Saleh

Deeb

2022

Heliyon

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The electrical characteristic of an MIS structure with biocompatible minerals doped (Brushite+Monetite: PVC) interface layer

Cited by 22 publications

References 42 publications

Negative Capacitance Phenomenon in GaAs-Based MIS Devices Under Ionizing Radiation

Negative Capacitance Phenomenon in GaAs-Based MIS Devices Under Ionizing Radiation

The effects of illumination on the current conduction mechanisms of the Au/C₂₀H₁₂/n-Si Schottky barrier diode (SBD)

Study of electrical properties of cobalt oxide-doped sodium meta vanadate at different frequencies

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The electrical characteristic of an MIS structure with biocompatible minerals doped (Brushite+Monetite: PVC) interface layer

Cited by 22 publications

References 42 publications

Negative Capacitance Phenomenon in GaAs-Based MIS Devices Under Ionizing Radiation

Negative Capacitance Phenomenon in GaAs-Based MIS Devices Under Ionizing Radiation

The effects of illumination on the current conduction mechanisms of the Au/C20H12/n-Si Schottky barrier diode (SBD)

Study of electrical properties of cobalt oxide-doped sodium meta vanadate at different frequencies

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The effects of illumination on the current conduction mechanisms of the Au/C₂₀H₁₂/n-Si Schottky barrier diode (SBD)