2021
DOI: 10.3390/ma14216279
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The Electrical and Thermal Transport Properties of La-Doped SrTiO3 with Sc2O3 Composite

Abstract: Donor-doped strontium titanate (SrTiO3) is one of the most promising n-type oxide thermoelectric materials. Routine doping of La at Sr site can change the charge scattering mechanism, and meanwhile can significantly increase the power factor in the temperature range of 423–773 K. In addition, the introduction of Sc partially substitutes Sr, thus further increasing the electron concentration and optimizing the electrical transport properties. Moreover, the excess Sc in the form of Sc2O3 composite suppresses mul… Show more

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“…Semiconducting n-type doped SrTiO 3 has been achieved by the incorporation of different elements like Nb or Ta on the Ti site or Y, Sm, or La on the Sr site. A weakness of SrTiO 3 regarding its use in thermoelectric devices is the relatively low electrical conductivity, based on the high effective mass and the resulting low charge carrier mobility, and simultaneously high thermal conductivity κ (about 5–18 Wm –1 K –1 ), which is reasoned by the centrosymmetric cubic structure that offers low effective phonon scattering centers. This weakness can be mitigated, for instance, by manufacturing superlattice heterostructures (such as Si/Ge or PbTe/PbSe 0.20 Te 0.80 superlattices), which leads to a reduction of thermal conductivity, or by decoupling the thermal and electronic transport by a suitable choice of the film and substrate thermal conductivities and respective thicknesses …”
Section: Introductionmentioning
confidence: 99%
“…Semiconducting n-type doped SrTiO 3 has been achieved by the incorporation of different elements like Nb or Ta on the Ti site or Y, Sm, or La on the Sr site. A weakness of SrTiO 3 regarding its use in thermoelectric devices is the relatively low electrical conductivity, based on the high effective mass and the resulting low charge carrier mobility, and simultaneously high thermal conductivity κ (about 5–18 Wm –1 K –1 ), which is reasoned by the centrosymmetric cubic structure that offers low effective phonon scattering centers. This weakness can be mitigated, for instance, by manufacturing superlattice heterostructures (such as Si/Ge or PbTe/PbSe 0.20 Te 0.80 superlattices), which leads to a reduction of thermal conductivity, or by decoupling the thermal and electronic transport by a suitable choice of the film and substrate thermal conductivities and respective thicknesses …”
Section: Introductionmentioning
confidence: 99%