“…Semiconducting n-type doped SrTiO 3 has been achieved by the incorporation of different elements like Nb or Ta on the Ti site or Y, Sm, or La on the Sr site. A weakness of SrTiO 3 regarding its use in thermoelectric devices is the relatively low electrical conductivity, based on the high effective mass and the resulting low charge carrier mobility, and simultaneously high thermal conductivity κ (about 5–18 Wm –1 K –1 ), which is reasoned by the centrosymmetric cubic structure that offers low effective phonon scattering centers. This weakness can be mitigated, for instance, by manufacturing superlattice heterostructures (such as Si/Ge or PbTe/PbSe 0.20 Te 0.80 superlattices), which leads to a reduction of thermal conductivity, or by decoupling the thermal and electronic transport by a suitable choice of the film and substrate thermal conductivities and respective thicknesses …”