The electric field dependence of the mobility in molecularly doped polymers

Abstract

One of the most puzzling aspects of the hole mobility in molecularly doped polymers, its electric field dependence, is studied. New data over the widest electric field range yet reported have been obtained and are compared with various functions proposed in the literature. Comprehensive linear and nonlinear statistical analysis reveals that only the function exp(E)1/2 is consistent with the data. The theoretical implications of this result are discussed.

Charge Injection in Polymer Light-Emitting Diodes

“…The stretched exponential form has first been observed for poly(N-vinyl carbazole) by Gill in 1972 [7]. Numerous experimental studies on molecularly doped polymers, pendant group polymers and amorphous molecular glasses have revealed a similar behavior [8,9,10].…”

Contact-Limited Hole Current in Poly(p-phenylenevinylene)

“…In Figure 5 the J-V characteristics for holes injected from the ITO* contact into the PPV are shown at various temperatures. The occurrence of SCLC in our ITO*/PPV devices enables us to directly obtain the E and T dependence of the hole mobility in PPV [26], given by: ( ) experimental studies on molecularly doped polymers, pendant group polymers, and amorphous molecular glasses have revealed a similar behavior [28][29][30].…”

Charge carrier transport in molecularly doped polycarbonate as a test case for the dipolar glass model

“…9 The only difference is that the fraction of sites, occupied by transport molecules is not c = 1 but c = 0.3, thus providing connection with the experimental data for a particular well-characterized system, 30% DEH:PC. [19][20][21][22]33 We used the simplest assumption that sites of the lattice are occupied by transport molecules independently with probability c; the use of the simplest hypothesis is mostly related to the lack of relevant experimental information on the local structure of organic glasses.…”

“…[19][20][21] We used σ = 0.13 eV, a = 7.7Å, 2γa = 11.8, and kT = 0.0252 eV. In these papers σ was calculated using the GDM analysis of the low field mobility.…”