The effects of varying metal precursor fluxes on the growth of InAlN by metal organic vapour phase epitaxy

Sadler, Thomas C.; Kappers, Menno J.; Oliver, Rachel A.

doi:10.1016/j.jcrysgro.2010.10.108

Cited by 20 publications

(22 citation statements)

References 33 publications

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“…For the 210 nm thick layer, cracks are observed on optical microscopy images (not shown), as it is usuallythe case for layers under tensile strain, and in particular for InAlN layers with an indium content lower than 17%. 17,35 It is well known that in other III-V material systems, such as InGaAs grown on GaAs,compressive strain relaxation occurs by the formation of 3D islands (referred to as the Stranski-Krastanovgrowth mechanism). 36 Concerning the epitaxy of InGaAs layers on InP, it was reported that strain relaxation occurred in the case of tensile strainby the formation of valleys.…”

Section: Role Of the Growth Temperaturementioning

confidence: 99%

Intrinsic degradation mechanism of nearly lattice-matched InAlN layers grown on GaN substrates

Perillat-Merceroz

Cosendey

Carlin

et al. 2013

Journal of Applied Physics

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Thanks toits high refractive index contrast, band gap and polarization mismatch compared to GaN, In 0.17 Al 0.83 N layers lattice-matched to GaN are an attractive solution for applications such as distributed Bragg reflectors, ultraviolet light-emitting diodes, orhigh electron mobility transistors. In order to study the structural degradation mechanism of InAlN layers with increasing thickness, we performed metalorganic vapor phase epitaxy of InAlN layers of thicknesses ranging from 2 to 500 nm, on free-standing (0001) GaN substrates with a low density of threading dislocations, for In compositions of 13.5% (layers under tensile strain), and 19.7%(layers under compressive strain). In both cases, a surface morphology with hillocks isinitially observed, followed by the appearance of V-defects. We propose that those hillocks arise due to kinetic roughening, and that V-defects subsequently appear beyonda critical hillock size. It is seen that the critical thickness for the appearance of V-defects increases together with the surface diffusion length either by increasing the temperature or the In flux because of asurfactant effect.In thick InAlN layers, a better (worse) In incorporation occurring on the concave (convex) shape surfaces of the V-defects is observed leading to a top phase-separated InAlN layer lying on the initial homogeneous InAlN layerafterV-defects coalescence.It is suggested that similar mechanisms could be responsible for the degradation of thick InGaN layers.

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Section: Role Of the Growth Temperaturementioning

confidence: 99%

Intrinsic degradation mechanism of nearly lattice-matched InAlN layers grown on GaN substrates

Perillat-Merceroz

Cosendey

Carlin

et al. 2013

Journal of Applied Physics

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“…Aumer et al (1999) reported that a narrow window around 855°C is suitable for InAlGaN layers for the best optical efficiency. Moreover, quaternary alloys may undergo immiscibility and phase separation (Takayama et al, 2001;Purton et al, 2007) which is strongly dependent on the growth parameters such as temperature (Sadler et al, 2009), pressure (Kim-Chauveau et al, 2011, precursor flux (Sadler et al, 2011) and even thickness (Chen et al, 2012) leading to the formation of hillocks, pinholes, cracks, and indium droplets etc. In addition, growth kinetics around TDs and IDs originating in the GaN buffer template may lead to similar degradations.…”

Section: Introductionmentioning

confidence: 99%

The structure of InAlGaN layers grown by metal organic vapour phase epitaxy: effects of threading dislocations and inversion domains from the GaN template

Ammar

Minj

Chauvat

et al. 2017

Journal of Microscopy

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SummaryDefects in quaternary InAlGaN barriers and their effects on crystalline quality and surface morphology have been studied. In addition to growth conditions, the quality of the GaN template may play an important role in the formation of defects in the barrier. Therefore, this work is focused on effects caused by threading dislocations (TDs) and inversion domains (IDs) originating from the underlying GaN. The effects are observed on the crystalline quality of the barrier and characteristic surface morphologies. Each type of TDs is shown to affect the surface morphology in a different way. Depending on the size of the corresponding hillock for a given pinhole, it was possible to determine the dislocation type. It is pointed out that the smallest pinholes are not connected to TDs whereas the large ones terminate either mixed type or edge type TDs. At sufficiently large layer thickness, the IDs originating from the GaN template lead to the formation of concentric trenches at the layer surface, and this is related to the change in growth kinetics on top and at the immediate surroundings of the ID.

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“…As the V/III ratio increased from 5205 (7122) to 9314, the roughness for AlInN alloys on GaN substrates decreased from 6.5 nm (4.75 nm) and 0.89 nm. Both the AFM and SEM results indicate that the use of higher V/III ratio resulted in improved surface morphology of the [65,66,69]. This finding indicates that the use of free-standing GaN substrate led to the growths of AlInN alloy with improved crystal quality.…”

Section: Growth Optimizations Of Lattice-matched Alinn Alloys On Gan mentioning

confidence: 81%

“…Up to today, the growths of AlInN thin films have been carried out by reactive radio-frequency (RF) magnetron sputtering [58][59][60], molecular beam epitaxy (MBE) [61][62][63], and MOVPE [33][34][35][64][65][66][67][68][69] on the c-plane sapphire substrates. However, comprehensive studies on the effect of the growth conditions for MOVPE of lattice-matched AlInN thin film have not been performed.…”

Section: Introductionmentioning

confidence: 99%

Metalorganic vapor phase epitaxy and characterizations of nearly-lattice-matched AlInN alloys on GaN/sapphire templates and free-standing GaN substrates

Zhang

et al. 2012

Journal of Crystal Growth

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The effects of varying metal precursor fluxes on the growth of InAlN by metal organic vapour phase epitaxy

Cited by 20 publications

References 33 publications

Intrinsic degradation mechanism of nearly lattice-matched InAlN layers grown on GaN substrates

Intrinsic degradation mechanism of nearly lattice-matched InAlN layers grown on GaN substrates

The structure of InAlGaN layers grown by metal organic vapour phase epitaxy: effects of threading dislocations and inversion domains from the GaN template

Metalorganic vapor phase epitaxy and characterizations of nearly-lattice-matched AlInN alloys on GaN/sapphire templates and free-standing GaN substrates

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