The effects of valency on transport properties in vitreous binary alloys of selenium

Schottmiller, J. C.; Tabak, M.; Lucovsky, G.; Ward, A. T.

doi:10.1016/0022-3093(70)90024-4

Cited by 298 publications

(69 citation statements)

References 22 publications

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“…By analogy with sulphur, it was initially proposed to interpret the a-Se Raman spectrum on the basis of a molecular approach: the main vibration band was considered to be the superposition of the peaks at 235 and 255 cm-' characteristic of chains and rings, respectively [6]. Further experimental data [2, 41, however, have caused some doubts to be cast.…”

Section: Discussionmentioning

confidence: 99%

Raman Scattering in Amorphous Selenium Molecular Structure and Photoinduced Crystallization

Baganich¹,

Mikla²,

Семак³

et al. 1991

Physica Status Solidi (b)

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Section: Discussionmentioning

confidence: 99%

Raman Scattering in Amorphous Selenium Molecular Structure and Photoinduced Crystallization

Baganich¹,

Mikla²,

Семак³

et al. 1991

Physica Status Solidi (b)

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“…• C. However, an undesirable decrease in the hole lifetime was found to accompany the introduction of As in the a-Se lattice [4,5].…”

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confidence: 98%

Photocurrent measurements in chlorine‐doped amorphous selenium

Benkhedir

Mansour

Djefaflia

et al. 2009

Physica Status Solidi (b)

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Transient photocurrent (TPC) measurements have been carried out on evaporated a‐Se films doped with either 12.5 or 67 ppm of Cl and compared with analogous measurements on undoped a‐Se samples. The two doping levels lead to strikingly different resulting current traces. While the 12.5 ppm doping level weakens, but does not eliminate the signature of the two hole traps that are observed in the TPC signals of undoped a‐Se, no indication for those levels remains in the 67 ppm Cl‐doped samples. It is argued that suppression of the trap generated by the negative‐U D− centre agrees with the notion that they are being supplanted by doping‐induced Cl− centres. The enhanced density of D+ centres and accompanying cross‐linking of Se chains by those three‐fold coordinated sites leads in turn to the weakening and disappearance of the shallower hole trap ascribed to dihydral angle variations. Results from constant‐photocurrent and time‐of‐flight (TOF) experiments support this interpretation of the TPC observations.

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“…These small polarons are usually associated with the structure of Se [39]. Scottmiller et al [40] have studied the effect of addition of various elements (S, Te, Bi, As, In, Ge etc.) on the structure of glassy Se by infrared and Raman spectroscopy.…”

Section: Discussionmentioning

confidence: 99%

“…These have distinct advantages, viz., large packing density, mass replication, fast data rate, high signal-to-noise ratio and high immunity to defects [1][2][3][4][5]. Among amorphous semiconductors, glassy chalcogenides (Se, Te, S) are more important because they have great varieties of band gaps and are transparent in IR region [6]. Recently, various workers [7][8][9][10] have reported the use of these materials for reversible optical recording by amorphous to crystalline phase change.…”

Section: Introductionmentioning

confidence: 99%

Electrical Conductivity and Thermoelectric Power of a-Se_80-xGa₂₀Te_x(x=0,5,10,15 and 20) Thin Films

et al. 2000

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The dc conductivity and thermoelectric power of a-Se8 o _ x G a 2 o T e x (x = 0, 5,10, 15 and 20) thin films were reported in the present work. The free charge carrier concentration was calculated with the help of dc conductivity and thermoelectric power measurements. The calculated values of free charge carrier concentration were used to evaluate the free charge carrier mobility from which grain boundary potential was evaluated. The results are interpreted in terms of small polaron hopping, the structure of Se-Te and the grain boundary potential barrier.

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The effects of valency on transport properties in vitreous binary alloys of selenium

Cited by 298 publications

References 22 publications

Raman Scattering in Amorphous Selenium Molecular Structure and Photoinduced Crystallization

Raman Scattering in Amorphous Selenium Molecular Structure and Photoinduced Crystallization

Photocurrent measurements in chlorine‐doped amorphous selenium

Electrical Conductivity and Thermoelectric Power of a-Se_80-xGa₂₀Te_x(x=0,5,10,15 and 20) Thin Films

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The effects of valency on transport properties in vitreous binary alloys of selenium

Cited by 298 publications

References 22 publications

Raman Scattering in Amorphous Selenium Molecular Structure and Photoinduced Crystallization

Raman Scattering in Amorphous Selenium Molecular Structure and Photoinduced Crystallization

Photocurrent measurements in chlorine‐doped amorphous selenium

Electrical Conductivity and Thermoelectric Power of a-Se80-xGa20Tex(x=0,5,10,15 and 20) Thin Films

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Electrical Conductivity and Thermoelectric Power of a-Se_80-xGa₂₀Te_x(x=0,5,10,15 and 20) Thin Films