2000
DOI: 10.1016/s0924-4247(00)00407-6
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The effects of thermal treatment on the anisotropic etching behavior of Cz- and Fz-silicon

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Cited by 13 publications
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“…A potential cause of steplike roughness is precipitation of interstitial oxygen during thermal treatments such as oxidation and nitride growth. Precipitated oxygen may give rise to stress which can be relieved by generation of defects [17]. In order to reduce the risk of defect generation, the oxidation temperature was reduced from 1050 to 900 • C whereas the LPCVD temperature was kept constant at 780 • C. However, no improvement of surface quality was obtained and the original temperatures were therefore maintained.…”
Section: Discussionmentioning
confidence: 99%
“…A potential cause of steplike roughness is precipitation of interstitial oxygen during thermal treatments such as oxidation and nitride growth. Precipitated oxygen may give rise to stress which can be relieved by generation of defects [17]. In order to reduce the risk of defect generation, the oxidation temperature was reduced from 1050 to 900 • C whereas the LPCVD temperature was kept constant at 780 • C. However, no improvement of surface quality was obtained and the original temperatures were therefore maintained.…”
Section: Discussionmentioning
confidence: 99%