The Effects of Test Conditions on MOS Radiation-Hardness Results

Dressendorfer, P. V.; Soden, J.M.; Harrington, J. J.; Nordstrom, T. V.

doi:10.1109/tns.1981.4335713

Cited by 74 publications

(15 citation statements)

References 4 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Radiation will shift the thresholds of the various transistors and it is well known that the bias state of the transistor during irradiation affects the magnitude of this threshold shift [4].…”

Section: Resultsmentioning

confidence: 99%

Pattern Imprinting in CMOS Static RAMs from Co-60 Irradiation

Schott

Zugich

1987

IEEE Trans. Nucl. Sci.

View full text Add to dashboard Cite

Total dose irradiation of various CMOS SRAMs is shown to imprint the pattern stored in the memory during irradiation. This imprinted pattern is the preferred state of the memory at subsequent power-up. Imprinting can occur at dose levels significantly below the failure level of the devices and is consistent with the bias dependent radiation induced threshold shifts of the individual transistors of the memory cells. However, before total imprinting occurs, other unusual imprinting phenomena can occur, such as a reverse imprinting effect seen in SOS memories, which is probably related to the bias dependence of back-channel leakage.

show abstract

Section: Resultsmentioning

confidence: 99%

Pattern Imprinting in CMOS Static RAMs from Co-60 Irradiation

Schott

Zugich

1987

IEEE Trans. Nucl. Sci.

View full text Add to dashboard Cite

show abstract

“…The weakly bound electron on the oxide trap defect can escape from the trap and tunnel back into the silicon. Furthermore the p-MOSFETs do not show a rebound effect after irradiation [106,115]. The threshold voltage of a p-MOSFET decreases negatively during irradiation.…”

Section: Rebound Effectmentioning

confidence: 93%

Surface effects in segmented silicon sensors

Schwandt

Fretwurst

Garutti

et al. 2017

Nuclear Instruments and Methods in Physics Research Section A:

View full text Add to dashboard Cite

PROF. DR. MICHAEL POTTHOFFii "Τὸν δὲ νοῦ καί ἐπιστήμης ἐραστὴν ἀνάγκη τὰς τῆς ἔμφρονος φύσεως αἰτίας πρώ-τας μεταδιώκειν." Πλάτωνος, Τίμαιος, Κεφ. 16 "The lover of reason and knowledge must first seek for the causes which belong to the rational order."Plato, Timaeus, Ch. 16 iii To my parents. . . iv AbstractSilicon detectors in Photon Science and Particle Physics require silicon sensors with very demanding specifications. New accelerators like the European X-ray Free Electron Laser (EuXFEL) and the High Luminosity upgrade of the Large Hadron Collider (HL-LHC), pose new challenges for silicon sensors, especially with respect to radiation hardness. High radiation doses and fluences damage the silicon crystal and the SiO 2 layers at the surface, thus changing the sensor properties and limiting their life time. Non-Ionizing Energy Loss (NIEL) of incident particles causes silicon crystal damage. Ionizing Energy Loss (IEL) of incident particles increases the densities of oxide charge and interface traps in the SiO 2 and at the Si-SiO 2 interface.In this thesis the surface radiation damage of the Si-SiO 2 system on high-ohmic Si has been investigated using circular MOSFETs biased in accumulation and inversion at an electric field in the SiO 2 of about 500 kV/cm. The MOSFETs have been irradiated by X-rays from an X-ray tube to a dose of about 17 kGy(SiO 2 ) in different irradiation steps. Before and after each irradiation step, the gate voltage has been cycled from inversion to accumulation conditions and back. From the dependence of the drain-source current on gate voltage the threshold voltage of the MOSFET and the hole and electron mobility at the Si-SiO 2 interface were determined. In addition, from the measured drain-source current the change of the oxide charge density during irradiation has been determined. The interface trap density and the oxide charge has been determined separately using the subthreshold current technique based on the Brews charge sheet model which has been applied for first time on MOSFETs built on high-ohmic Si. The results show a significant field-direction dependence of the surface radiation parameters. The extracted parameters and the acquired knowledge can be used to improve simulations of the surface radiation damage of silicon sensors.

show abstract

“…Td > RLCTC, (8) where Crc is the total collector node capacitance. Using the previous capacitance values (C, =0.…”

Section: Bipolar Hari)ening Approachesmentioning

confidence: 99%

“…The degradation of circuit parameters is a direct consequence of the shifts in device parameters caused by total-dose radiation as explained above. It has been seen that the magnitude of device parameter shifts depends not only of the total dose and dose rate of radiations but also on the bias of the devices during irradiation [8]. This is due to the bias dependency of the charge trapping on each of the failure mechanisms.…”

Section: Getdevicecmentioning

confidence: 99%

“…Fcr Metal Oxide Semiconductoi (MOS) technology, these device parameter shifts are a strong fuaction of the operating voltages of devices during irradiations [8]. As the improper function of even a single device may constitute failure for the whole IC, each device must be tested individually to insure identifying the earliest circuit failure due to radiation exposure.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation