The effects of substrate bias on phase stability and properties of sputter-deposited tungsten carbide

Krzanowski, James E.; Endrino, José L.

doi:10.1016/j.matlet.2004.04.036

Cited by 26 publications

(9 citation statements)

References 11 publications

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“…The resistivity for the Ti-B-C coatings are in general 275 also higher (~10 3 µΩ cm) than for Ti-A-C-Ag (A = Si, Ge, Sn or Cu) coatings (~10 2 µΩ 276 cm) [22] or for other comparable nanocomposites [37,38,39,40]. However, the contact 277 resistance is comparable, and the contact resistance is just a factor ~5 larger than for Ag 278 against Ag, which is remarkable since the coatings contains ~16 at.% O.…”

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confidence: 87%

“…The above structure/property-design possibilities in the Ti-B-36 C system make its coatings interesting for electrical contact applications. 37 Today, noble metals are the most commonly used materials in electrical contacts since 38 they have low resistivity and contact resistance, combined with chemical stability [12,13]. 39 The high prices and the low wear resistance in some environments motivate 40 investigations of new electrical contact materials with good electrical properties, but with 41 better mechanical properties than the noble metals.…”

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confidence: 99%

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Ti–B–C nanocomposite coatings deposited by magnetron sputtering

Lauridsen

Nedfors

Jansson

et al. 2012

Applied Surface Science

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9Ti-B-C nanocomposite coatings with a B content of 8-17 at. %, have been deposited by 10 magnetron sputtering from B 4 C, Ti, and C targets. X-ray diffraction, photoelectron 11 spectroscopy, and electron microscopy show that the coatings consist of nanocrystalline 12 (nc) TiC:B embedded in a matrix of amorphous (a) C, BC x ,TiO x and BO x . The fraction of 13 amorphous phase scales with the Ti concentration, where the matrix predominantly 14 consists of free C with some BC x in coatings with a C/Ti ratio >1, while the matrix 15 predominantly consists of BC x with some free C in coatings with a C/Ti ratio <1. Nc-16TiC:B/a-BC x /a-C coatings with low amount of free C exhibit a contact resistance 17 comparable to the contact resistance of an Ag sputtered coating at loads of ~1 N against 18 an Au probe, despite the O content of ~16 at. %.

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confidence: 87%

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confidence: 99%

Ti–B–C nanocomposite coatings deposited by magnetron sputtering

Lauridsen

Nedfors

Jansson

et al. 2012

Applied Surface Science

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“…The deposition of tungsten carbide films has been done by many chemical vapour deposition (CVD) [26][27][28][29] and physical vapour deposition (PVD) methods [3,4,[7][8][9][10][11][12][30][31][32][33][34][35][36][37]. Focusing in PVD technique, different options have been tried namely:…”

Section: Accepted Manuscriptmentioning

confidence: 99%

Tailored synthesis of nanostructured WC/a-C coatings by dual magnetron sputtering

Abad

Muñoz‐Márquez

Mrabet

et al. 2010

Surface and Coatings Technology

119

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Nanostructured coatings with variable contents of tungsten carbide (WC) and amorphous carbon (a-C) are prepared by controlling the sputtering power ratio using WC and graphite targets. XRD and TEM/ED analysis shows that increasing the C incorporation, the WC nanocrystalline phases evolve from γ-W 2 C to β-WC 1-x. Further C enrichment leads to a nanocomposite structure of small WC 1-x crystals dispersed in a-C matrix. The a-C at.% is estimated by XPS analysis and correlated with the observed tribo-mechanical properties. The hardness and friction properties vary from hard/high friction (36-40 GPa; µ=0.6-0.8) to moderate-hard/low friction (16-20 GPa; µ∼0.2) coatings depending on the film composition. The transition point is found for a-C content of 10 at.%. This correlates with a change from nanocrystalline WC to nanocomposite WC 1-x /a-C coatings. The overall study will help to understand the previous literature data and will serve as guide for a tailored synthesis of these WC/a-C nanocomposites.

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“…This indicates that additional minor phases may be present, and the convolution of these peaks with the WC 1Ϫx (200) may result in an apparent shift of the peak. A previous study on WC films [20] examined the phase formation in films deposited at 275 °C as a function of substrate bias. It was found that at 0 V bias, the films consisted only of the WC 1Ϫx phase.…”

Section: B Xrdmentioning

confidence: 99%

Structural disordering in WC thin films induced by SiC additions

Krzanowski

Wormwood

2005

Metall Mater Trans A

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An investigation has been conducted into the structural disordering in WC thin films induced by SiC additions. The effect of this disordering on film hardness is also reported. In this investigation, WC-SiC films with a SiC content varying from 11.6 to 38.2 pct were deposited using dual rf magnetron sputtering. The relative Si and W content in the films was determined using electron microprobe analysis. Analysis by X-ray diffraction (XRD) confirmed that, within this compositional range, the film structure transformed from crystalline to amorphous. The XRD patterns showed that the crystalline films consisted primarily of WC 1Ϫx , along with a small amount of W 2 C; no clear evidence for a separate crystalline SiC phase was found. High-resolution transmission electron microscopy (HRTEM) studies showed that with a lower Si content, the films consisted of crystallites 3 to 5 nm in diameter embedded in an amorphous phase. As the Si content increased, the amorphous phase content increased, both as interlayers between crystallites and as particles within the crystallites. Further Si increases led to a structure consisting of a high density of interconnected amorphous particles within well-defined semicrystalline domains separated by a thin amorphous interlayer. At the highest Si content, a clear two-phase morphology evolved, consisting of two nearly amorphous but distinct phases, which suggests a fine-scale partial-phase separation between the WC and the SiC. At the atomic level, it was found that Si decreased the coherence length within the crystalline phase, resulting in a structure of mixed crystalline/highly disordered phases scaled in the range of 2 to 4 nm. Despite the significant alterations in the film structures due to SiC additions, the hardness and modulus of the films were essentially constant within the compositional range of the transition, although films with SiC contents of less than ϳ11 pct had significantly lower hardness levels. It is proposed that the effects of Si on hardness can be explained in terms of competition between the percolation threshold and the amorphization-inducing effect of Si.

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The effects of substrate bias on phase stability and properties of sputter-deposited tungsten carbide

Cited by 26 publications

References 11 publications

Ti–B–C nanocomposite coatings deposited by magnetron sputtering

Ti–B–C nanocomposite coatings deposited by magnetron sputtering

Tailored synthesis of nanostructured WC/a-C coatings by dual magnetron sputtering

Structural disordering in WC thin films induced by SiC additions

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