1958
DOI: 10.1109/jrproc.1958.286841
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The Effects of Neutron Irradiation on Germanium and Silicon

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Cited by 145 publications
(30 citation statements)
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“…The activation energy, ER' has been studied by several investigators, and the values determined [23][24][25][26][27] were in good agreement with that presented here. The current-…”
Section: 22supporting
confidence: 85%
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“…The activation energy, ER' has been studied by several investigators, and the values determined [23][24][25][26][27] were in good agreement with that presented here. The current-…”
Section: 22supporting
confidence: 85%
“…This component was identified by Goben and has the following expression One important limitation of transistors operated in a neutron environment is the decrease in transistor current gain observed upon exposure to neutron irradiation. The reduction in current gain results from the degradation of minority lifetime in the base region (i.e., to the resultant [14][15][16][17][18] reduction of the base recombination term ) and the re- 8-12 8-12 duction in the emitter efficiency In Goben's work have been noted for large charge3, 5-7. exp(qV/nkT) Bulk recombination-generation in the bulk n -1.5…”
Section: Readmentioning
confidence: 99%
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