The Effects of MOS Layers on Sensing Properties of MOS Photosensor

Abstract

Abstract-In this research work, many samples of metal -oxide -silicon photosensors

Theoretical models and simulation of optoelectronic properties of a-Si-H PIN photosensors

“…However, in case of poor junctions, the injection current can be the dominating mechanism for transient leakage current at relatively high biases, the dark current decays initially and then rises to a steady-state value [7]. The mid-gap states energy levels and their spatial distribution in I-layer and at P-I interface can be obtained [8,9] from the transient dark current and steady-state thermal generation current. Emission of carriers from the P-I and N-I interface and thermal generation in I-layer, which is a voltage dependent at low biases, mainly contributes to the dark current.…”

“…It is found that the dangling bond states energy levels distributed in range from shallow to deep levels and activated at low bias voltages and visible pulses illumination, are responsible for the characteristic photodiode response shape [8]. The advantages of PIN photodiode and MOS structure have been combined together to produce lateral PIN photosensors with maximum photocurrent and low dark current and achieved high sensitivity and responsivity with low voltage bias [9]. LPIN photodiode fabricated in CMOS processes [10] achieved bandwidth compatible with 10 Gb/sec and even higher data rate [11].…”