The Effects of Microwave Postgrowth Processing of BaSrTiO3 Thin Films on Their Dielectric Properties

Abstract

Tunable complex oxide thin films have generated a lot of interest in recent years due to their potential to become a core technology in the new generation of multiple communications devices. These films are grown via different deposition methods and frequently postprocessed in order to enhance their dielectric properties. This paper discusses an alternative postprocessing technique where complex oxide thin films grown by radio frequency (RF) magnetron sputtering have been treated with an external microwave field instead of a conventional furnace. The treated films and untreated reference film were characterized for their microstructure and dielectric properties. The obtained results indicate a significant reduction in dielectric losses and leakage current in the microwave processed films as opposed to the untreated reference. The results are discussed together with potential additional benefits of the proposed approach.

Effects of Ba2+/Sr2+ ratio on the microstructure, dielectric and ferroelectric properties of BaxSr(1−x)TiO3 films prepared by micro-arc oxidation

“…The capacitance of the film increased as the film surface roughness and density were reduced, resulting in a decrease in mismatch-stress. This observation is in agreement with the results reported in references [3,41,42]. The dielectric loss of BST thin films varies with frequency, as shown in Figure 8.…”

“…Ba x Sr (1- x ) TiO 3 (BST) is one of the new functional materials intensively attended due to its high dielectric constant, low dielectric loss, adjustable Curie temperature, dielectric nonlinearity, stable structure and environment-friendly [1-3]. This compound has been extensively applied in large-scale dynamic random memory, non-volatile ferroelectric memory, tunable microwave device, pyroelectric detector and in many crucial optical components [4-8].…”