Proceedings of IEEE Holm Conference on Electrical Contacts
DOI: 10.1109/holm.1993.489660
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The effects of metal oxide additions or dopants on the electrical performance of AgSnO/sub 2/ contact materials

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Cited by 9 publications
(3 citation statements)
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“…Also, it is well known that the addition of 0.5 wt. % WO 3 , respectively CuO improves the wettability in the Ag-SnO 2 melting system and the contact resistance, decreasing the overtemperature and the sticking tendencies [8]. It was confirmed by the good behaviour during the life time tests of our electrical contact pieces doped with WO 3 and CuO.…”
supporting
confidence: 72%
“…Also, it is well known that the addition of 0.5 wt. % WO 3 , respectively CuO improves the wettability in the Ag-SnO 2 melting system and the contact resistance, decreasing the overtemperature and the sticking tendencies [8]. It was confirmed by the good behaviour during the life time tests of our electrical contact pieces doped with WO 3 and CuO.…”
supporting
confidence: 72%
“…Doping agent are used 1521-3331/00$10.00 © 2000 IEEE to obtain closer control over the structure of the material, by improving the wettability between the molten silver and the tin oxide in the pool zone under arc, so as to avoid segregation of these two elements. The properties and interactions of the different additives are described under [8] and [9]. The performance of AgSnO is improved by the addition of bismuth oxide Bi O [2], [4], [6], [7]; this not only improves the wettability between the molten silver and the tin oxide, it also reacts with SnO under the heat generated by the arc, to form mixed oxides by the liberation of oxygen.…”
Section: B Contact Materialsmentioning
confidence: 99%
“…Estão entre os dopantes mais comumente usados: óxido de índio (In 2 O 3 ), óxido de cobre (Cu 2 O), óxido de rutênio (RuO 2 ), óxido de bismuto (Bi 2 O 3 ), óxido de molibdênio (MoO 3 ) e óxido de tungstênio (WO 3 ) (9,10,(13)(14)(15)(16)(17)(18) . Além de outros como: óxido de zinco (ZnO), óxido de tântalo (Ta 2 O 5 ), óxido de mercúrio (HgO), óxido de antimônio (Sb 2 0 3 ), óxido de telúrio (TeO 2 ) e carbeto de tântalo (TaC) (19,20) . Estes agentes dopantes possibilitam uma melhora nas propriedades elétricas para este tipo de contato elétrico no que diz respeito à redução da resistividade, evitando a formação de uma fina camada de óxido de estanho na superfície de contato, e promovendo benefícios no processo de sinterização e na molhabilidade da superfície do óxido de estanho pela prata fundida (9,(13)(14)(15)(16)(17)(18) .…”
Section: Methodsunclassified