“…Although using the thick barrier [7], low growth temperature and high growth rate can degrade the segregation effect to some extent, it was observed that substrate tilting angle, growth interruption can also affect the segregation phenomenon [20,[23][24][25]. Similarly, surface segregation of third-column atoms in group III-V arsenide compounds, binary, ternary alloys and their heterostructures results in nonabrupt interfaces [3,15,[26][27][28][29][30]. However, far from complexity of segregation phenomenon, it affects the mobility of the electron gas confined at the inverted interface due to the alloy scattering mechanism.…”