The effects of ICP dry etching and HF wet etching on the morphology of SiO<sub>2</sub> surface

Shariar, Kazy; Zhang, Jie; Coasey, Keith; Sufian, Abu; Remy, Roddel A.; Qu, Jing; Mackay, Michael M.; Zeng, Yuping

doi:10.1088/2053-1591/aad591

Cited by 5 publications

(3 citation statements)

References 12 publications

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“…The concentration of these particles in the solution follows the ionization equilibrium of the weak electrolyte [14][15][16]. The ionization equilibrium constants, K 1 and K 2 , are temperature-dependent.…”

Section: Introductionmentioning

confidence: 99%

Wet Etching of Quartz Using a Solution Based on Organic Solvents and Anhydrous Hydrofluoric Acid

et al. 2022

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The quartz-crystal resonator is the core device for frequency control in modern communication systems and network technology. At present, in modern resonator blanks manufacturing, BOE solution is usually used as the etching solution, but its etching rate is relatively volatile, and the surface morphology of the blanks is prone to defects after etching, which brings certain difficulties to the deep-etching process of the wafer. To solve the above challenges, this paper systematically compares a BOE solution and anhydrous etching solution in terms of etching rate, surface morphology, and electrical properties of the blanks after etching. Seven groups of blanks were etched using different etching solutions with different etching conditions to verify their effect on the surface morphology and electrical properties of quartz blanks. The experimental results suggest that the application of anhydrous etching solution has achieved better surface morphology and electrical properties and can be more suitable for application in batch manufacturing. In general, when using anhydrous etching solution, it is possible to reduce surface roughness by up to 70% and equivalent resistance by 32%, and the etch rate is almost 10 times lower than BOE solution under the same temperature, which is more conducive to the rate control of wafers in the etching process.

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Section: Introductionmentioning

confidence: 99%

Wet Etching of Quartz Using a Solution Based on Organic Solvents and Anhydrous Hydrofluoric Acid

et al. 2022

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“…Therefore, dry isotropic etching is preferred for next‐generation semiconductor devices similar to anisotropic etching. [ 5–8 ]…”

Section: Introductionmentioning

confidence: 99%

Cyclic etching of silicon oxide using NF₃/H₂ remote plasma and NH₃ gas flow

Gill

Kim

Gil

et al. 2021

Plasma Processes & Polymers

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Selective isotropic cyclic dry etching of silicon oxide (SiO2) was investigated using a three‐step cyclic process composed of hydrogen fluoride (HF) adsorption by NF3/H2 remote plasma and reaction with NH3 gas flow to form ammonium fluorosilicate ((NH4)2SiF6), and desorption by heating. The variation of the ratio of NF3:H2 (2:1 to 1:3) and adsorption time (10–180 s) showed the highest etch selectivity of SiO2 over Si3N4 at 1:2 ratio of NF3:H2 and with the adsorption time of 20 s. The etch selectivity higher than 40 was observed with 20 s of adsorption time with a 1:2 ratio of NF3:H2 remote plasma and the total etch depth was linearly increased with the increase of cycles with the SiO2 EPC of ~7.5 nm/cycle.

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“…However, wet etching processes may not be applicable for fabrication of next-generation devices of 10 nm or less due to the issues such as pattern leaning and collapsing caused by unbalanced capillary forces during drying of rinse liquid. In addition, since the etch rate is fast, it is difficult to control the process, and the problems might occur such as surface chemical damage by the etchant during etch process [6][7][8] . Therefore, it is necessary to develop selective isotropic dry etching processes that may solve these problems.…”

mentioning

confidence: 99%

Selective isotropic etching of SiO2 over Si3N4 using NF3/H2 remote plasma and methanol vapor

Gil

Kim

Jang

et al. 2023

Sci Rep

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In this study, an isotropic etching process of SiO2 selective to Si3N4 using NF3/H2/methanol chemistry was investigated. HF was formed using a NF3/H2 remote plasma, and in order to remove the F radicals, which induces spontaneous etching of Si-base material, methanol was injected outside the plasma discharge region. Through this process, etch products were formed on the surface of SiO2, and then the (NH4)2SiF6 was removed by following heating process. When the H and F radicals were abundant, the highest SiO2 etch per cycle (EPC) was obtained. And, the increase of H2 and methanol percentage in the gas chemistry increased the etch selectivity by decreasing the F radicals. The etch products such as (NH4)2SiF6 were formed on the surfaces of SiO2 and Si3N4 during the reaction step and no noticeable spontaneous etching by formation of SiF4 was observed. By optimized conditions, the etch selectivity of SiO2 over Si3N4 and poly Si higher than 50 and 20, respectively, was obtained while having SiO2 EPC of ~ 13 nm/cycle. It is believed that the cyclic process using NF3/H2 remote plasma and methanol followed by heating can be applied to the selective isotropic SiO2 etching of next generation 3D device fabrication.

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The effects of ICP dry etching and HF wet etching on the morphology of SiO₂ surface

Cited by 5 publications

References 12 publications

Wet Etching of Quartz Using a Solution Based on Organic Solvents and Anhydrous Hydrofluoric Acid

Wet Etching of Quartz Using a Solution Based on Organic Solvents and Anhydrous Hydrofluoric Acid

Cyclic etching of silicon oxide using NF₃/H₂ remote plasma and NH₃ gas flow

Selective isotropic etching of SiO2 over Si3N4 using NF3/H2 remote plasma and methanol vapor

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The effects of ICP dry etching and HF wet etching on the morphology of SiO2 surface

Cited by 5 publications

References 12 publications

Wet Etching of Quartz Using a Solution Based on Organic Solvents and Anhydrous Hydrofluoric Acid

Wet Etching of Quartz Using a Solution Based on Organic Solvents and Anhydrous Hydrofluoric Acid

Cyclic etching of silicon oxide using NF3/H2 remote plasma and NH3 gas flow

Selective isotropic etching of SiO2 over Si3N4 using NF3/H2 remote plasma and methanol vapor

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Product

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The effects of ICP dry etching and HF wet etching on the morphology of SiO₂ surface

Cyclic etching of silicon oxide using NF₃/H₂ remote plasma and NH₃ gas flow