The Effects of Hydrogen on the Enhanced Low Dose Rate Sensitivity (ELDRS) of Bipolar Linear Circuits

Pease, R.L.; Adell, P.C.; Rax, B.G.; Chen, Xiao Jie; Barnaby, Hugh; Holbert, Keith E.; Hjalmarson, Harold P.

doi:10.1109/tns.2008.2006478

Cited by 73 publications

(26 citation statements)

References 19 publications

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“…Accordingly, a mechanism involving chemical reactions of molecular hydrogen was explored using REOS calculations. The results show a dose-rate dependence that compares well with the data [4,30].…”

Section: Enhanced Low Dose-rate Sensitivity (Eldrs)supporting

confidence: 81%

“…The physics developed to handle dose-rate effects was applied to the problem of enhanced low dose-rate sensitivity (ELRDS) that leads to reduced radiation effects at very low dose rates in bipolar junction transistors [30]. Recent work has led to the hypothesis that elevated concentrations of molecular hydrogen can be associated with this effect.…”

Section: Enhanced Low Dose-rate Sensitivity (Eldrs)mentioning

confidence: 99%

See 1 more Smart Citation

Physics of intense, high energy radiation effects.

Hjalmarson¹,

Hartman²,

Magyar³

2011

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Section: Enhanced Low Dose-rate Sensitivity (Eldrs)supporting

confidence: 81%

Section: Enhanced Low Dose-rate Sensitivity (Eldrs)mentioning

confidence: 99%

Physics of intense, high energy radiation effects.

Hjalmarson¹,

Hartman²,

Magyar³

2011

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“…The technology processes and designs of discrete devices have evolved since the early investigations. The changes in various device parameters can significantly impact the low dose rate sensitivity, a phenomenon which we still do not completely understand, despite several investigations on the physical mechanism of ELDRS [4]− [6].…”

Section: Introductionmentioning

confidence: 99%

Evaluation of Enhanced Low Dose Rate Sensitivity in Discrete Bipolar Junction Transistors

Chen

Topper

Forney

et al. 2012

2012 IEEE Radiation Effects Data Workshop

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Abstract--We evaluate the low dose rate sensitivity in several families of discrete bipolar transistors across device parameter, quality assurance level, and irradiation bias configuration. The 2N2222 showed the most significant low dose rate sensitivity, with low dose rate enhancement factor of ×3.91 after 100 krad(Si). The 2N2907 also showed critical degradation levels. The devices irradiated at 10 mrad(Si)/s exceeded specifications after 40 and 50 krad(Si) for the 2N2222 and 2N2907 devices, respectively.

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“…The ELDRS-free parts, such as the LM136 voltage reference, can exhibit less degradation at low dose rate (10 mrad(Si)) than at high dose rate [6]. But the critical question is how the ELDRS-free parts will respond at lower dose rates.…”

Section: Introductionmentioning

confidence: 99%

“…But the critical question is how the ELDRS-free parts will respond at lower dose rates. There have been several recent studies on the role of hydrogen to low dose rate sensitivity [3], [5], [6]. Hydrogen contamination from certain packaging can enhance the effects of ELDRS [8].…”

Section: Introductionmentioning

confidence: 99%

The Effects of ELDRS at Ultra-Low Dose Rates

Chen

Forney

Pease³

et al. 2010

2010 IEEE Radiation Effects Data Workshop

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Abstract-We present results on the effects on ELDRS at dose rates of 10, 5, 1, and 0.5 mrad(Si)/s for a variety of radiation hardened and commercial devices. We observed low dose rate enhancement below 10 mrad(Si)/s in several different parts. The magnitudes of the dose rate effects vary. The TL750L, a commercial voltage regulator, showed dose rate dependence in the functional failures, with initial failures occurring after 10 krad(Si) for the parts irradiated at 0.5 mrad(Si)/s. The RH1021 showed an increase in low dose rate enhancement by 2× at 5 mrad(Si)/s relative to 8 mrad(Si)/s and high dose rate, and parametric failure after 100 krad(Si). Additionally the ELDRS-free devices, such as the LM158 and LM117, showed evidence of dose rate sensitivity in parametric degradations. Several other parts also displayed dose rate enhancement, with relatively lower degradations up to ~ 15 to 20 krad(Si). The magnitudes of the dose rate enhancement will likely increase in significance at higher total dose levels.

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The Effects of Hydrogen on the Enhanced Low Dose Rate Sensitivity (ELDRS) of Bipolar Linear Circuits

Cited by 73 publications

References 19 publications

Physics of intense, high energy radiation effects.

Physics of intense, high energy radiation effects.

Evaluation of Enhanced Low Dose Rate Sensitivity in Discrete Bipolar Junction Transistors

The Effects of ELDRS at Ultra-Low Dose Rates

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