The effects of hydrogen absorption on the electrical conduction in discontinuous palladium films

Transformations of Molecular Frameworks by Host–Guest Response: Novel Routes toward Two-Dimensional Self-Assembly at the Solid–Liquid Interface

“…It is supposed that the rise of the discontinuous Pd film resistance immediately after the hydrogen exposure is related to the surface work function because the surface work function is sensitively influenced by the surface adsorption of contaminate. 10) The reduction in the resistance was probably caused by the lattice expansion, which appeared after the increase because the time for diffusion of hydrogen in the Pd particles is longer than the time for adsorption of hydrogen on the surface. This phenomenon indicated that it is very promising to use the change of the surface work function to fabricate the hydrogen sensor with fast response time.…”

“…From the previous investigations of the electrical properties of discontinuous Pd films, R=R 0 should be exponentially proportion to the ratio of ÁÈ=È and Àr=s 0 , where ÁÈ, È, r, and s 0 are the variation of the surface work function during hydrogen exposure, the surface work function of Pd before hydrogen exposure, the particles radius and the inter island separation before hydrogen exposure, respectively. [8][9][10][11] If it is assumed that the islands are fully saturated with hydrogen, then ÁÈ=È can be approximately treated as constant. 10,11) Accordingly, the saturated ratio of R=R 0 should be exponentially proportion to the ratio of Àr=s 0 .…”

“…[8][9][10][11] If it is assumed that the islands are fully saturated with hydrogen, then ÁÈ=È can be approximately treated as constant. 10,11) Accordingly, the saturated ratio of R=R 0 should be exponentially proportion to the ratio of Àr=s 0 . [9][10][11] In order to prove the explanation of Fig.…”

“…10,11) Accordingly, the saturated ratio of R=R 0 should be exponentially proportion to the ratio of Àr=s 0 . [9][10][11] In order to prove the explanation of Fig. 3, the dependence of lnðR=R 0 Þ on the ratio of r=s 0 was investigated and shown in Fig.…”

Fabrication process and variation rule of electrical properties of CrSi thin film resistors

“…In order to clarify the universal applicability of process rule, it is researched that sputtering process and annealing process on parameters of different components target material, compared with 50wt.% Cr target. From a microcosmic perspective, [12] it is known that the resistance of film is made up of two components: the electronic transmission inside grains and the tunnelling of electrons between grains. It is precisely because of the difference in composition of target material, 40wt.% Cr accounts for a smaller proportion of element Cr in film than 50wt.% Cr in the same manufacturing process, resulting in smaller metal grain size and greater difference in the ratio of grain size to spacing (from the comparison in Figure 5 below).…”