The effects of extended heat treatment on Ni induced lateral crystallization of amorphous silicon thin films

Jin, Zhonghe; Moulding, Keith M.; Kwok, Hoi‐Sing; Wong, Man

doi:10.1109/16.737444

Cited by 58 publications

(10 citation statements)

References 13 publications

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“…As for the decrease in growth rate, this is caused by the atomic rearrangement in the -Si layer. 10) The driving force for NILC is the free energy difference between crystalline Si and -Si. During the RTA heating, the atomic rearrangement in the -Si layer resulted in a reduction in energy difference; hence, also NILC rate.…”

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Comparison of Ni-Metal Induced Lateral Crystallization Thin-Film Transistors Fabricated by Rapid Thermal Annealing and Conventional Furnace Annealing at 565 °C

Wu²,

Gong³

2007

jjap

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The first results of the theory of the behaviour d standing waves in curved aystals are presented. m e proposed theory is based on the Taupin theory of dynamical x-ray diffraction in culved crystals and the theory d the secondary radiation yield in deformed uystals. This theory is applied for calculation d the angular dependence of the secondary emission yield in a cylindrically bent Si(400) monocrystal, Cu K, radiation. Processes with different depth of secondary emission yield, i.e. photoemission (Lvi = 0.1 pm) and fluorescence (Lui = 70 pm) are considered. The behaviour of the reflection coefficient and standing waves in the bulk d the WNed aystal i s investigated. The standing wave intensities in the depth of the curved crystal show much more sensitivity to the phaseshift than in the pelfect one. This fact can be used for the investigation of thin layers of impurity atoms embedded in the crystal matrix. Puiiti P a& Rusticheiii F 1978 I AppL Cystnllo~ 11 AA?-9 ..I ~ Caciuffo R, Melone S, Rustichelli F and Boeuf A 1987 Kushnir V I, Kaganer V M and Suvorov E V 1985 Acru mkaei S 1962Acta Cmtnllom 15 1311-12 Phys. Rep. 152 1-71 Oystnllogz A 41 17-25 l3kagi S 1969 J. PhG. , SosoC. &pan 26 139-53 Kmalchuk M V, Kohn V G and Lohanovich E F 1985 Fir Tverd Tela 27 3379-87 (Engl. transl. 1985 Sou phys..Solid Stnte 27) Koha V G and Kovalchuk M V 1981 Phys. Srotus Solidi a 64 359-76 Authier A, Gronkowski J and Malgrange C 1989 Acta Crystallogz A 45 43241 A201

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Section: Resultsmentioning

confidence: 99%

“…During the RTA heating, the atomic rearrangement in the -Si layer resulted in a reduction in energy difference; hence, also NILC rate. 10) The performance of TFT devices is shown in Fig. 4 and Table II.…”

Section: Resultsmentioning

confidence: 99%

Comparison of Ni-Metal Induced Lateral Crystallization Thin-Film Transistors Fabricated by Rapid Thermal Annealing and Conventional Furnace Annealing at 565 °C

Wu²,

Gong³

2007

jjap

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“…Recently, polycrystalline silicon (poly-Si) film has attracted much attention because of its wide range of applicability in electronics, such as in active matrix flat panel displays, [1][2][3][4][5][6] solar cells, 7) image sensors, 8) static random access memory (SRAM) devices, 9) and three-dimensional electronics. 10) Several techniques can be employed to achieve high-quality poly-Si film with large grain size, low grain boundary density, and high carrier mobility.…”

Section: Introductionmentioning

confidence: 99%

High-Efficiency Crystallization of Amorphous Silicon Films on Glass Substrate by New Metal-Mediated Mechanism

Lin¹,

Lee²,

Lee

2005

Jpn. J. Appl. Phys.

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A new crystallization technique for crystallizing amorphous silicon (a-Si) film with a low thermal budget is proposed. A highly crystalline polycrystalline silicon (poly-Si) film can be rapidly obtained on a low-cost glass substrate by this technique. A material with a large IR absorption coefficient provides energy for crystallizing a-Si film into poly-Si film. By this new technique, we can make highly crystalline poly-Si film efficiently. Atomic force microscopy (AFM), Raman scattering, X-ray diffraction (XRD), scanning electron microscopy (SEM), and transmission electron microscopy (TEM) with energy dispersive spectrometer (EDS) measurements demonstrated that a-Si film can be fully crystallized by annealing with five 5 s pulses at 870 C. The roughness of film processed by this new technique is only 0.59 nm which is superior to the 7.8 nm obtained by the conventional excimer laser crystallization (ELC) technique. The average grain size and grain growth rate obtained in this technique are 0.82 mm and 120 mm/min, respectively.

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“…Recently, Pd or Ni was found to induce crystallization of a-Si outside its coverage area. [12][13][14] This phenomenon of metalinduced ''lateral'' crystallization, or MILC for short, produces poly-Si thin films largely free of metal contamination, with better crystallinity than those produced by SPC. Among various metals, Ni has been shown to be the best candidate of inducing lateral crystallization at low temperature for fabricating good-performance poly-Si TFTs.…”

mentioning

confidence: 99%

Thickness Dependence of Microstructure of Laterally Crystallized Poly-Si Thin Films and Electrical Characteristics of Low-Temperature Poly-Si TFTs

Chang

Lin

Chang

et al. 2003

J. Electrochem. Soc.

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The effects of thickness of a-Si thin films on the resulting microstructure of metal-induced laterally crystallized ͑MILC͒ poly-Si and electrical characteristics of MILC low temperature poly-Si ͑LTPS͒ thin film transistors ͑TFTs͒ were investigated. The TEM images revealed a double-layer structure in the 1000-Å MILC poly-Si thin film. However, for the 400-Å MILC poly-Si thin film, there were single-layer grains within the thin film layer. The reason has been ascribed to the geometry restriction in the crystallization procedure. The average mobility of fabricated MILC LTPS TFTs with active layer thickness of 400 Å showed a little higher than that with 1000 Å active layer. Moreover, the MILC LTPS TFTs with active layer thickness of 400 Å exhibited better electrical uniformity than those with 1000 Å active layer either in threshold voltage or field-effect mobility. The reason should also be attributed to the different crystalline structures within the two thin-film layers.Low-temperature poly-Si ͑LTPS͒ thin-film transistors ͑TFTs͒ have received much attention in recent years because of their increasing use in active matrix displays, such as active matrix liquid crystal displays ͑AMLCDs͒ 1-5 and active matrix organic lightemitting displays ͑AMOLEDs͒, 6-10 and potential for threedimensional integrated circuit ͑IC͒ applications. 11 The ability of fabricating high-performance LTPS TFTs enables their use in a wide range of applications. Therefore, there is great interest in improving the performance of LTPS TFTs. Solid-phase crystallization ͑SPC͒ has been a popular crystallization method for producing large-grain poly-Si thin films at low process temperature. However, a major drawback of conventional SPC is the long crystallization times at a temperature of about 600°C, which is not suitable for large-area glass substrate applications. Besides, conventional SPC also suffers from large defect density in the grains, which makes it hard to produce high-performance TFTs. Although excimer laser crystallization ͑ELC͒, a promising technique for mass production of LTPS TFTs on large-area glass substrates, can produce large-grain poly-Si with low intragrain defect density at low temperature, it suffers from high initial facility cost, high process complexity, and a narrow process window. Recently, Pd or Ni was found to induce crystallization of a-Si outside its coverage area. 12-14 This phenomenon of metalinduced ''lateral'' crystallization, or MILC for short, produces poly-Si thin films largely free of metal contamination, with better crystallinity than those produced by SPC. Among various metals, Ni has been shown to be the best candidate of inducing lateral crystallization at low temperature for fabricating good-performance poly-Si TFTs.Although the MILC process and the electrical characteristics of MILC LTPS TFTs have been widely studied, there are still unsolved questions requiring identification. In this work, the effect of thinfilm thickness on the results of MILC poly-Si thin films and the electrical characteristics of MIL...

show abstract

The effects of extended heat treatment on Ni induced lateral crystallization of amorphous silicon thin films

Cited by 58 publications

References 13 publications

Comparison of Ni-Metal Induced Lateral Crystallization Thin-Film Transistors Fabricated by Rapid Thermal Annealing and Conventional Furnace Annealing at 565 °C

Comparison of Ni-Metal Induced Lateral Crystallization Thin-Film Transistors Fabricated by Rapid Thermal Annealing and Conventional Furnace Annealing at 565 °C

High-Efficiency Crystallization of Amorphous Silicon Films on Glass Substrate by New Metal-Mediated Mechanism

Thickness Dependence of Microstructure of Laterally Crystallized Poly-Si Thin Films and Electrical Characteristics of Low-Temperature Poly-Si TFTs

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