Abstract:The effects of multiple scattering on the electron transport properties in drain regions are numerically investigated for the cases of strained-Si diodes with or without scattering in the channel. The performance of non-ballistic (with scattering) channel Si-diodes is compared with that of ballistic (without scattering) channel Si-diodes, using the strain and scattering model. Our results show that the values of the electron velocity and the current in the strain model are higher than the respective values in … Show more
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