2015
DOI: 10.1088/1674-4926/36/4/044004
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The effects of drain scatterings on the electron transport properties of strained-Si diodes with ballistic and non-ballistic channels

Abstract: The effects of multiple scattering on the electron transport properties in drain regions are numerically investigated for the cases of strained-Si diodes with or without scattering in the channel. The performance of non-ballistic (with scattering) channel Si-diodes is compared with that of ballistic (without scattering) channel Si-diodes, using the strain and scattering model. Our results show that the values of the electron velocity and the current in the strain model are higher than the respective values in … Show more

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